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MMUN2211LT1G

Part No MMUN2211LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 246MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 35 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 024088-MMUN2211LT1G
Family Name MMUN2211L
Introduction Date June 05, 1998
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Consumer Electronics, Portable Devices, Industrial
Ultra Librarian 3D Model Ultra Librarian MMUN2211LT1G CAD Model

Description

ON Semiconductor MMUN2211LT1G Bipolar Transistor

The ON Semiconductor MMUN2211LT1G is a high-performance bipolar (BJT) transistor, specifically designed to offer a blend of low voltage and high current operation. This PNP transistor is a part of ON Semiconductor's innovative semiconductor solutions, catering to a wide array of electronic applications. The device is housed in a compact SOT-23 package, making it suitable for space-constrained applications.

Key Features:

  • Transistor Polarity: PNP - This configuration allows for a smooth flow of current when a small negative base current is applied, making it ideal for switching and amplification applications.
  • Collector-Emitter Voltage (VCEO): The MMUN2211LT1G can handle voltages up to 50V between its collector and emitter terminals, providing a good margin for various electronic circuits.
  • Collector Current (IC): It supports a continuous collector current up to 100 mA, suitable for a range of low to medium power requirements.
  • DC Current Gain (hFE): The device boasts a high DC current gain, with a minimum hFE of 100 at 10 mA, which is beneficial for signal amplification purposes.
  • Power Dissipation: With a power dissipation of 225 mW, the MMUN2211LT1G can manage moderate levels of power without overheating, ensuring reliable operation.
  • Operating and Storage Temperature Range: This transistor operates efficiently within a temperature range of -55°C to +150°C, making it robust enough for challenging environmental conditions.
  • Package: The SOT-23 package is not only space-saving but also allows for efficient PCB mounting and thermal management.

Applications:

The MMUN2211LT1G is versatile and can be used in a variety of applications, including but not limited to:

  • Signal amplification in audio and other low-power applications
  • Switching applications in consumer electronics
  • Driver stages in amplifiers and other linear circuits
  • Power management in portable devices
  • Control circuits in embedded systems

With its excellent performance characteristics, the MMUN2211LT1G from ON Semiconductor is a reliable choice for designers looking to optimize their electronic designs for efficiency and compactness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,230+ $0.0155 $50.0650
6,900+ $0.0145 $100.0500
10,715+ $0.0140 $150.0100
15,385+ $0.0130 $200.0050
19,845+ $0.0126 $250.0470
24,795+ $0.0121 $300.0195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 946,390 pieces
MOQ: 3230 pcs
Order Increment : 1 pcs
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