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MMUN2213LT1G

Part No MMUN2213LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 246MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 024089-MMUN2213LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian MMUN2213LT1G CAD Model

Description

ON Semiconductor MMUN2213LT1G

The MMUN2213LT1G from ON Semiconductor is a robust, high-performance bipolar (BJT) transistor designed to deliver reliable and consistent performance for a wide range of electronic applications. This small-signal transistor is a versatile component that can be used in various circuit configurations, making it a valuable addition to any electronic design project.

Key Features:

  • Type: PNP Bipolar Junction Transistor (BJT)
  • Package: SOT-23-3 surface-mount package, offering a compact footprint for space-constrained applications.
  • Configuration: Single
  • Collector-Emitter Voltage (VCEO): 50V, providing adequate headroom for many electronic circuits.
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 100mA, suitable for signal processing and amplification tasks.
  • DC Current Gain (hFE): 100 to 300 at IC = 10mA, VCE = 5V, ensuring good amplification characteristics.
  • Power Dissipation (Pd): 225mW, allowing it to handle moderate levels of power in electronic circuits.
  • Operating Temperature Range: -55°C to +150°C, ensuring stability and performance across a broad range of environmental conditions.
  • RoHS Compliant: Yes, meeting environmental standards and regulations for electronic components.

Applications:

The MMUN2213LT1G transistor is suited for a variety of applications, including but not limited to:

  • Signal amplification
  • Switching operations
  • Audio amplifiers
  • Driver stages in Hi-Fi amplifiers and television circuits
  • Voltage and current regulators
  • General-purpose switching and amplification

With its PNP configuration, the MMUN2213LT1G is particularly useful in complementary designs when paired with an NPN transistor, offering designers flexibility in creating push-pull amplifier stages or other types of complementary circuits.

ON Semiconductor's commitment to quality ensures that the MMUN2213LT1G transistor is a reliable and durable choice for professionals and hobbyists alike. Its small package size and high electrical performance make it an ideal choice for both new designs and as a replacement part in existing applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1414 $50.1970
755+ $0.1325 $100.0375
1,175+ $0.1280 $150.4000
1,680+ $0.1191 $200.0880
2,185+ $0.1146 $250.4010
2,725+ $0.1101 $300.0225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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