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MMUN2230LT1G

Part No MMUN2230LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description Bias Resistor Transistor | TRANS PREBIAS NPN 246MW SOT23-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
DC Current Gain (hFE) (Minimum) at Ic, Vce 3 at 5mA, 10V
Vce Saturation (Maximum) at Ib, Ic 250mV at 5mA, 10mA
Current - Collector Cutoff (Maximum) 500nA
Maximum Power 246mW
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Family Part Number MMUN22**L
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 1225666-MMUN2230LT1G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMUN2230LT1G CAD Model

Description

The MMUN2230LT1G is a high-performance PNP bipolar transistor manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This product is designed for general-purpose amplification and switching applications, offering a compact surface-mount package and exceptional reliability.

Key Features

  • Transistor Type: PNP - The MMUN2230LT1G is a PNP transistor, which means it is turned on when a small current flows through the transistor's base in the opposite direction to the emitter.
  • Collector-Emitter Voltage (Vceo): This transistor can withstand a maximum collector-emitter voltage of 50V, providing a good margin for a variety of electronic circuits.
  • Collector Current (Ic): It has a maximum collector current of 100mA, suitable for driving small loads in electronic circuits.
  • Power Dissipation (Pd): The MMUN2230LT1G is capable of dissipating up to 225mW, ensuring stable operation under normal conditions.
  • DC Current Gain (hFE): It offers a DC current gain (hFE) range from 100 to 300, providing a consistent and predictable amplification factor for signals passing through the device.
  • Package / Case: The device comes in an SOT-23-3 package, which is a small, surface-mount package that is ideal for space-constrained applications.
  • Operating Temperature Range: It can operate over a wide temperature range, from -55°C to +150°C, making it suitable for use in harsh environments.
  • RoHS Compliant: The MMUN2230LT1G is RoHS compliant, meaning it meets the European Union's restrictions on the use of certain hazardous substances in electrical and electronic equipment.

Applications

The MMUN2230LT1G is versatile and can be used in a wide array of applications including, but not limited to:

  • Signal amplification
  • Switching circuits
  • Power management
  • Linear amplification
  • Audio amplifiers
  • Driver stages in hi-fi amplifiers and television circuits

In conclusion, the MMUN2230LT1G from ON Semiconductor is a reliable and efficient solution for designers looking for a general-purpose PNP transistor. Its robustness, coupled with ON Semiconductor's commitment to quality, makes it an excellent choice for a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,500+ $0.0166 $58.1000
8,475+ $0.0136 $115.2600
13,160+ $0.0132 $173.7120
18,185+ $0.0127 $230.9495
23,365+ $0.0124 $289.7260
31,250+ $0.0111 $346.8750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 3500 pcs
Order Increment : 1 pcs
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