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MTD6N10E1

Part No MTD6N10E1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description NFET DPAK 100V 0.40R
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 1 pcs
MSL Level 3 (168 Hours)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 886420-MTD6N10E1
Ultra Librarian 3D Model Ultra Librarian MTD6N10E1 CAD Model

Description

MTD6N10E1 - ON Semiconductor's Power MOSFET

The MTD6N10E1 is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient electronics. This particular MOSFET is designed to meet the rigorous demands of modern electronic circuits, providing efficient power management and signal amplification across a wide range of applications.

Constructed with advanced manufacturing techniques and housed in a robust package, the MTD6N10E1 boasts impressive power density and a low on-resistance, making it an ideal choice for high-efficiency power conversion in both consumer and industrial electronics. With a drain-to-source voltage (V<sub>DS) of 100V and a continuous drain current (I<sub>D) of 6A, this MOSFET can handle significant power without compromising on performance.

Key features of the MTD6N10E1 include:

  • Low R<sub>DS(on): This MOSFET has a low on-state resistance, which minimizes power loss and improves overall efficiency in your circuit design.
  • High Thermal Performance: With an excellent thermal resistance, the MTD6N10E1 can operate at higher temperatures without the risk of overheating, ensuring reliability even under strenuous conditions.
  • Fast Switching Speed: The device is engineered for fast switching, reducing transition losses and enabling operation at higher frequencies, which is crucial for applications such as switching power supplies and DC-DC converters.
  • Gate Charge Optimization: The MOSFET is optimized for reduced gate charge, which further enhances its switching performance and reduces power consumption during operation.

Whether you're designing power supplies, motor controls, or any other system that requires efficient power handling, the MTD6N10E1 is an excellent choice. Its robustness and reliability are hallmarks of ON Semiconductor's commitment to quality, ensuring that your products perform consistently and effectively.

For engineers and designers looking for a MOSFET that doesn't compromise on power, efficiency, or reliability, the MTD6N10E1 from ON Semiconductor stands out as a superior component that will help to drive your innovations forward.

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