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MUN2212T1

Part No MUN2212T1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 338MW SC59 / NPN SILICON BIAS RESISTOR TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Cut Tape (CT)
Part Status Obsolete (End Of Life)
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) at Ic, Vce 60 at 5mA, 10V
Vce Saturation (Maximum) at Ib, Ic 250mV at 300μA, 10mA
Current - Collector Cutoff (Maximum) 500nA
Power - Max 338mW
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Part Number Series MUN2212
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803173-MUN2212T1
Ultra Librarian 3D Model Ultra Librarian MUN2212T1 CAD Model

Description

The MUN2212T1 from ON Semiconductor is a high-performance, versatile NPN bipolar digital transistor designed to meet the needs of various electronic applications. This product is a part of ON Semiconductor's innovative portfolio of semiconductor components that are known for their reliability, efficiency, and cutting-edge technology.

Key Features

  • Transistor Type: NPN - This allows for high current gain and is commonly used in amplifying or switching applications.
  • Configuration: Single - The device includes one transistor, making it ideal for compact circuit designs.
  • Maximum Collector-Emitter Voltage (Vceo): 50V - This high voltage rating ensures the transistor can handle significant voltage levels without breakdown.
  • Maximum Collector-Base Voltage (Vcbo): 60V - Further contributes to the device's ability to withstand high voltage conditions.
  • Maximum Emitter-Base Voltage (Vebo): 6V - Ensures stable operation when the emitter-base junction is reverse biased.
  • Maximum Collector Current (Ic): 100mA - Adequate for a range of low to medium power applications.
  • DC Current Gain (hFE): 100 to 300 - Indicates efficient current amplification capabilities.
  • Power Dissipation (Pd): 225mW - The transistor can dissipate a moderate amount of power without overheating, making it suitable for various electronic circuits.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C - Guarantees stable performance across a wide temperature range, making it suitable for harsh environments.

Applications

The MUN2212T1 is commonly used in a variety of applications, including but not limited to:

  • Signal processing
  • Power management
  • Switching circuits
  • Amplification circuits
  • Consumer electronics
  • Automotive modules
  • Telecommunication systems

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The MUN2212T1 is manufactured under strict quality control processes, ensuring that it performs to the specifications under a range of conditions. Its robust design also ensures long-term reliability, making it a preferred choice for designers and engineers across various industries.

Environmental Considerations

The MUN2212T1 is designed with environmental responsibility in mind. It complies with RoHS directives, indicating that it is free from hazardous substances such as lead, mercury, and cadmium. This commitment to environmental sustainability makes it a suitable choice for eco-friendly products and applications.

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