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MUN2234T1G

Part No MUN2234T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 338MW SC59
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 338mW
Mounting SMD (SMT)
Case / Package SC-59
Win Source Part Number 045102-MUN2234T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MUN2234T1G CAD Model

Description

The ON Semiconductor MUN2234T1G is a high-performance, PNP Bipolar (BJT) Single Transistor designed for use in a wide range of electronic applications. This versatile transistor is a reliable component that offers a seamless integration into various circuits, ensuring efficient performance and long-term stability.

Key Features

  • Transistor Polarity: PNP - This means the transistor uses holes as the majority charge carriers, making it suitable for positive signal amplification.
  • Collector-Emitter Voltage (VCEO): 50V - The maximum voltage across the collector-emitter terminal that the transistor can withstand when the base is open.
  • Collector-Base Voltage (VCBO): 60V - The maximum voltage that can be applied from the collector to the base with the emitter open.
  • Emitter-Base Voltage (VEBO): 6V - The maximum voltage that can be applied from the emitter to the base with the collector open.
  • Continuous Collector Current (IC): 100mA - The maximum continuous current that can flow through the collector of the transistor.
  • Power Dissipation (Pd): 225mW - The amount of power that the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 120 at 10mA - This specifies the transistor's ability to amplify the current; the higher the hFE, the better the amplification.
  • Operating Temperature Range: -55°C to +150°C - Ensuring reliable operation across a wide range of environmental conditions.
  • Package / Case: SOT-323-3 - A compact surface-mount package that allows for high-density mounting on printed circuit boards.
  • RoHS Compliant: Yes - The product meets the requirements of the Restriction of Hazardous Substances Directive, making it environmentally friendly.

Applications

The MUN2234T1G is ideal for a variety of applications, including but not limited to:

  • Signal Processing
  • Audio Amplifiers
  • Switching and Regulation Circuits
  • Power Management
  • General Purpose Amplification

Conclusion

The ON Semiconductor MUN2234T1G is a testament to ON Semiconductor's commitment to providing high-quality, reliable components for the electronics industry. With its robust features and versatile applications, it is an essential part of any electronic enthusiast's or professional's toolkit.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,105+ $0.0275 $57.8875
5,105+ $0.0226 $115.3730
7,895+ $0.0219 $172.9005
10,870+ $0.0213 $231.5310
14,125+ $0.0205 $289.5625
18,870+ $0.0184 $347.2080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 2105 pcs
Order Increment : 1 pcs
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