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MUN5334DW1T1G

Part No MUN5334DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number MUN53
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 645771-MUN5334DW1T1G
Ultra Librarian 3D Model Ultra Librarian MUN5334DW1T1G CAD Model

Description

Overview of Product MUN5334DW1T1G

The MUN5334DW1T1G is a high-performance, dual digital transistor from ON Semiconductor, known for its reliability and efficiency. This product is specifically designed to meet the demanding requirements of today's electronic circuits, providing a compact and power-efficient solution for a wide range of applications.

Key Features

  • Dual Bipolar Transistor: The MUN5334DW1T1G contains two independent transistors in a single package, which saves space and reduces the component count in circuit designs.
  • High Current Gain (hFE): With a high current gain, this transistor can amplify weak signals efficiently, making it suitable for signal processing applications.
  • Low VCE(sat): The low collector-emitter saturation voltage ensures lower power dissipation and improved energy efficiency.
  • SOT-363 Package: The small surface-mount package allows for a compact design footprint and is ideal for densely packed PCBs.
  • Lead-Free and RoHS Compliant: The MUN5334DW1T1G is manufactured with environmentally friendly materials, complying with RoHS standards.

Applications

The versatility of the MUN5334DW1T1G makes it suitable for a variety of applications, including:

  • Inverter circuits
  • Interface circuits
  • Driver circuits
  • Signal amplification

Technical Specifications

The MUN5334DW1T1G boasts the following technical specifications:

  • Configuration: Dual NPN
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector Current (IC): 100mA
  • DC Current Gain (hFE): 100 at 10mA, 5V
  • Power Dissipation: 150mW
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The MUN5334DW1T1G is subjected to rigorous testing and quality control measures to ensure it meets the industry standards for performance and reliability. Customers can trust this component for its consistent operation and longevity in their electronic designs.

To learn more about the MUN5334DW1T1G and how it can be integrated into your next project, visit the ON Semiconductor website or contact their sales and support team for additional information and technical support.

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Pricing & Ordering

Quantity Unit Price Ext. Price
925+ $0.0625 $57.8125
2,255+ $0.0513 $115.6815
3,485+ $0.0498 $173.5530
4,800+ $0.0482 $231.3600
6,205+ $0.0466 $289.1530
8,315+ $0.0417 $346.7355
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 925 pcs
Order Increment : 1 pcs
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