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NCP5901BDR2G

Part No NCP5901BDR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC MOSFET DVR SYNC VR12 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 4.5 V to 13.2 V
Logic Voltage - VIL, VIH 0.7V, 3.4V
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 35V
Rise and Fall Time 16ns, 11ns
Temperature Range - Operating 0°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 025075-NCP5901BDR2G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NCP5901BDR2G CAD Model

Description

ON Semiconductor NCP5901BDR2G Overview

The NCP5901BDR2G is a high-performance, dual N-channel MOSFET driver designed and manufactured by ON Semiconductor. This integrated circuit (IC) is engineered to provide efficient power management and driving capabilities for a variety of applications, including synchronous buck converters, active clamp forward converters, and full-bridge or half-bridge topologies.

Key Features

  • High Peak Output Current: The NCP5901BDR2G is capable of delivering a peak output current of up to 3A, enabling it to drive large capacitive loads with ease.
  • Wide Supply Voltage Range: Operating with a supply voltage range from 5V to 12V, this MOSFET driver is versatile and can be used in a variety of power systems.
  • Adaptive Non-overlapping Gate Drives: To prevent shoot-through current, the NCP5901BDR2G features adaptive non-overlapping gate drives, ensuring safer operation and improved reliability.
  • High Switching Frequency: With the capability to support high switching frequencies, this driver is suitable for high-speed applications, allowing for more efficient power conversion.
  • Thermal Shutdown Protection: The built-in thermal shutdown feature provides additional safety by shutting down the IC when excessive temperatures are detected.
  • Under-voltage Lockout: The under-voltage lockout (UVLO) ensures that the driver operates only when the supply voltage is within the specified range, protecting the device and the system.

Applications

The NCP5901BDR2G's robust design and features make it an ideal choice for a wide array of applications, including:

  • DC-DC Converters
  • Motor Control Systems
  • Power Supplies for CPUs and GPUs
  • Telecommunication Equipment
  • Networking Hardware

Package and Quality

Encased in a compact SOIC-8 package, the NCP5901BDR2G saves valuable board space while delivering high performance. ON Semiconductor is committed to quality, and this MOSFET driver is no exception, meeting stringent industry standards for reliability and performance.

Whether you're designing a sophisticated power management system or looking for a reliable driver for high-speed switching applications, the NCP5901BDR2G from ON Semiconductor offers a powerful solution that combines efficiency, versatility, and protection.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5007 $50.0700
245+ $0.4109 $100.6705
380+ $0.3980 $151.2400
520+ $0.3852 $200.3040
675+ $0.3724 $251.3700
900+ $0.3338 $300.4200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 77,400 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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