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NDD01N60T4G

Part No NDD01N60T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.5A DPAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.5Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 160 pF @ 25 V
Power Dissipation (Max) 46W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number NDD01
Standard Package 2,500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 648153-NDD01N60T4G
Ultra Librarian 3D Model Ultra Librarian NDD01N60T4G CAD Model

Description

ON Semiconductor NDD01N60T4G Power MOSFET

The ON Semiconductor NDD01N60T4G is a high-performance, N-channel Power MOSFET designed for a range of applications that demand efficient power management and high reliability. This MOSFET is a part of ON Semiconductor's extensive portfolio of power management devices, which are known for their quality and performance in the industry.

The NDD01N60T4G is built using ON Semiconductor's proprietary technology, which provides improved performance characteristics in comparison to conventional MOSFETs. This includes lower on-resistance, higher load capacity, and reduced gate charge, which translates to increased efficiency in power conversion applications.

Key Features

  • High Current Capability: The NDD01N60T4G is capable of handling continuous drain currents up to 1.2 A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical on-resistance of just 0.9 Ohms, this MOSFET ensures minimal power loss and heat generation during operation.
  • High Voltage Threshold: The device can withstand drain-source voltages up to 600 V, providing a wide safety margin for electrical surges and spikes.
  • Fast Switching Speed: The fast switching capabilities of the NDD01N60T4G make it ideal for high-frequency power switching applications.
  • Robust Thermal Performance: The device is encapsulated in a TO-252 (DPAK) package which offers excellent thermal performance and is suitable for compact PCB layouts.

Applications

  • Switch Mode Power Supplies (SMPS)
  • Power Inverters
  • Motor Drives
  • DC-DC Converters
  • Battery Management Systems
  • LED Lighting

The NDD01N60T4G is an ideal choice for designers looking for a Power MOSFET that offers a balance of efficiency, reliability, and performance. ON Semiconductor's commitment to quality ensures that this MOSFET will deliver consistent performance across a variety of conditions and applications.

Whether you're designing power supplies, working on power conversion for renewable energy systems, or creating sophisticated motor control circuits, the NDD01N60T4G provides the functionality and dependability required for your power management needs.

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