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NDD03N80ZT4G

Part No NDD03N80ZT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 2.9A DPAK-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V
Power Dissipation (Max) 96W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number NDD03
Standard Package 2,500 pcs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 648159-NDD03N80ZT4G
Ultra Librarian 3D Model Ultra Librarian NDD03N80ZT4G CAD Model

Description

The NDD03N80ZT4G from ON Semiconductor is a high-performance, N-channel Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This device is part of ON Semiconductor's portfolio of energy-efficient semiconductors, which are recognized for their reliability and innovative technology.

Key Features

  • High Voltage Capability: With a maximum drain-source voltage (V<sub>DS) of 800V, the NDD03N80ZT4G is suitable for high voltage applications, providing excellent power supply reliability.
  • Low On-Resistance: The low on-resistance (R<sub>DS(on)) minimizes conduction losses, enhancing overall efficiency and performance in power conversion systems.
  • High Continuous Drain Current: A continuous drain current (I<sub>D) of up to 3A allows for robust operation in demanding conditions.
  • Fast Switching Speed: The device's fast switching capability ensures efficient operation at high frequencies, which is vital for power supplies and converters.
  • Low Gate Charge: Reduced gate charge (Q<sub>g) leads to lower switching losses, making the NDD03N80ZT4G a more energy-efficient choice for electronic designs.
  • Thermal Stability: Excellent thermal characteristics ensure stable performance across a wide temperature range, making it ideal for industrial and automotive environments.

Applications

The NDD03N80ZT4G is optimized for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • LED Lighting
  • DC-DC Converters
  • Motor Drives

Package and Quality

Encased in a TO-252 (DPAK) package, the NDD03N80ZT4G offers a compact footprint for space-constrained applications. It is designed to meet stringent quality standards, ensuring high reliability and performance consistency. The device is also RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability.

With its combination of high voltage capability, efficiency, and robustness, the NDD03N80ZT4G is a smart choice for designers seeking to optimize their power management solutions.

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