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NGTB40N60FL2WG

Part No NGTB40N60FL2WG
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description INSULATED GATE BIPOLAR TRANSISTO / Bipolar (BJT) Transistor
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 1 pcs
Moisture Sensitivity Level (MSL) Vendor Undefined
REACH Status REACH Unaffected
Win Source Part Number 648471-NGTB40N60FL2WG
Ultra Librarian 3D Model Ultra Librarian NGTB40N60FL2WG CAD Model

Description

The NGTB40N60FL2WG is an IGBT (Insulated Gate Bipolar Transistor) device designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This high-performance IGBT is designed to offer a combination of fast switching, low on-state voltage, and high thermal stability, making it an ideal choice for a wide range of power applications.

Key Features

  • High Efficiency: With a collector-emitter saturation voltage (V<sub>CE(sat)) of typically 1.85V, this IGBT ensures high efficiency in power conversion, which is crucial for energy-saving applications.
  • Fast Switching: The NGTB40N60FL2WG boasts a low gate charge and optimized capacitance profile, which enables fast switching speeds, improving performance in switching applications like inverters and converters.
  • High Current Rating: With a continuous collector current (I<sub>C) rating of 40A, this IGBT can handle significant power levels, suitable for high-power applications.
  • High Temperature Operation: The device is designed to perform reliably in high-temperature environments, with a maximum junction temperature (T<sub>j) of 175°C.

Applications

The NGTB40N60FL2WG is versatile and can be used in a variety of applications, including:

  • AC and DC motor drives
  • Uninterruptible Power Supplies (UPS)
  • Power factor correction (PFC) circuits
  • Induction heating
  • Solar inverters
  • Welding equipment

Package and Quality Assurance

The NGTB40N60FL2WG is offered in a TO-247 package, which is known for its high power dissipation capabilities. This package ensures that the device can handle high power levels while maintaining structural integrity and reliability.

ON Semiconductor is committed to delivering high-quality products. The NGTB40N60FL2WG IGBT is subjected to rigorous testing and quality control measures to ensure it meets the industry standards for performance and reliability.

Conclusion

The NGTB40N60FL2WG from ON Semiconductor is a high-performance IGBT that combines efficiency, fast switching, and high power handling capabilities, making it an excellent choice for designers looking to optimize their power systems. Its robust package and ability to operate at high temperatures further ensure that this IGBT can be used in a wide range of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.1869 $58.6166
34+ $3.4361 $116.8274
53+ $3.3287 $176.4211
72+ $3.2213 $231.9336
93+ $3.1139 $289.5927
125+ $2.7916 $348.9500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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