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NGTB40N65FL2WG

Part No NGTB40N65FL2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT - Field Stop II
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 160A
Vce(on) (Maximum) @ Vge, Ic 2V @ 15V, 40A
Power - Max 366W
Switching Energy 970μJ (on), 440μJ (off)
Input Type Standard
Gate Charge 170nC
Td (on/off) @ 25°C 84ns/177ns
Test Condition 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr) 72ns
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 1231160-NGTB40N65FL2WG
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name NGTB40N65FL2W
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian NGTB40N65FL2WG CAD Model

Description

Introducing the NGTB40N65FL2WG Power IGBT from ON Semiconductor

The NGTB40N65FL2WG is a high-performance insulated gate bipolar transistor (IGBT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This IGBT is part of the renowned family of power semiconductors that are engineered to meet the demanding requirements of high-power switching applications. With its robust design and advanced features, the NGTB40N65FL2WG is an ideal choice for a wide range of power electronics applications, including motor drives, uninterruptible power supplies (UPS), inverter systems, and more.

Key Features and Benefits

  • High Current Capability: The NGTB40N65FL2WG is capable of handling continuous collector currents up to 40A, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage (Vce) rating of 650V, this IGBT can efficiently manage voltage spikes and transients in various applications.
  • Low On-Resistance: The device features a low on-state voltage (Vce(sat)) to minimize conduction losses, enhancing overall system efficiency.
  • Fast Switching Speed: The IGBT is designed with a fast switching speed, which reduces switching losses and improves performance in high-frequency operations.
  • Co-Packaged Free Wheeling Diode: The inclusion of a co-packaged soft recovery diode ensures efficient freewheeling and reverse recovery performance, which is critical in reducing electromagnetic interference (EMI) and improving reliability.

Enhanced Reliability and Performance

The NGTB40N65FL2WG is fabricated using ON Semiconductor's latest IGBT technology, which provides enhanced ruggedness and reliability. It is equipped with a robust and durable package that ensures long-term reliability even in harsh operating conditions. The device also features a maximum junction temperature of 150°C, which allows for a wider operating temperature range and enhances thermal management.

Applications

Thanks to its high efficiency and power handling capabilities, the NGTB40N65FL2WG is suitable for a variety of applications, including:

  • AC and DC motor drives
  • Renewable energy inverters
  • Power factor correction circuits
  • Switched-mode power supplies (SMPS)
  • Welding equipment

ON Semiconductor's commitment to quality ensures that the NGTB40N65FL2WG IGBT provides designers with a reliable and high-performance solution for their power management challenges. With its combination of features, this IGBT is set to enhance the efficiency and reliability of power electronic systems worldwide.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.2762 $50.9334
17+ $5.9702 $101.4934
26+ $5.7836 $150.3736
36+ $5.5971 $201.4956
47+ $5.4105 $254.2935
62+ $4.8508 $300.7496
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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