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NGTB50N65FL2WG

Part No NGTB50N65FL2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 50A TO247 / IGBT - Field Stop II
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 100A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 50A
Power - Max 417W
Switching Energy 1.5mJ (on), 460μJ (off)
Input Type Standard
Gate Charge 220nC
Td (on/off) at 25°C 100ns/237ns
Test Condition 400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr) 94ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805336-NGTB50N65FL2WG
Ultra Librarian 3D Model Ultra Librarian NGTB50N65FL2WG CAD Model

Description

Introducing the NGTB50N65FL2WG IGBT from ON Semiconductor

The NGTB50N65FL2WG is a state-of-the-art insulated gate bipolar transistor (IGBT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance IGBT is tailored for a wide array of power applications, offering an optimal balance between switching speed and on-state loss reduction. It is a perfect choice for designers looking for efficiency and reliability in their high-power switching applications.

Key Features

  • High Current Capability: The NGTB50N65FL2WG is capable of supporting a continuous collector current of up to 50A, making it suitable for high-power applications.
  • Low On-State Voltage: This IGBT has a low on-state voltage drop (V<sub>CE(sat)) which minimizes conduction losses and enhances overall system efficiency.
  • Fast Switching Speed: Its fast switching characteristics ensure reduced switching losses and are ideal for high-frequency operations.
  • Robust Temperature Performance: With a maximum operating junction temperature of 175°C, it can handle challenging thermal environments and offers a reliable performance over a wide temperature range.
  • Co-Packaged Free Wheeling Diode: The device includes an anti-parallel, hyperfast recovery diode that provides efficient freewheeling functionality in inductive load applications.

Applications

The NGTB50N65FL2WG is designed for use in a variety of applications where efficient power conversion is crucial. These include:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Inverters
  • Induction Heating
  • Renewable Energy Inverters (Solar, Wind)
  • Electric Vehicle (EV) Charging Stations

Quality and Reliability

ON Semiconductor ensures that the NGTB50N65FL2WG meets the highest quality and reliability standards. The device is subjected to rigorous testing and quality control measures to deliver consistent performance. With ON Semiconductor's commitment to sustainability, this IGBT is also designed with eco-friendly materials, adhering to international environmental regulations.

Whether you're designing an energy-efficient motor drive or a robust power supply system, the NGTB50N65FL2WG from ON Semiconductor offers a powerful solution that combines performance, efficiency, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.6748 $51.0732
22+ $4.6563 $102.4386
34+ $4.5108 $153.3672
46+ $4.3653 $200.8038
60+ $4.2198 $253.1880
80+ $3.7832 $302.6560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,100 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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