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NP0900SBT3G

Part No NP0900SBT3G
Manufacturer ON Semiconductor
Catalog TVS - Thyristors
Description THYRISTOR 75V 80A SMB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Circuit Protection
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Voltage - Breakover 98V
Voltage - Off State 75V
Voltage - On State 4V
Peak Pulse Current(Ippm) 80A
Current - Hold (Ih) 150mA
Number of Elements 1
Capacitance 122pF
Mounting SMD (SMT)
Dimension DO-214AA, SMB
Win Source Part Number 1083283-NP0900SBT3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP0900SBT3G CAD Model

Description

ON Semiconductor NP0900SBT3G Overview

The NP0900SBT3G from ON Semiconductor is a high-performance, N-channel Small Signal MOSFET designed to deliver efficient power management and signal processing in a wide range of applications. This compact and versatile transistor is an ideal choice for designers looking for a reliable component that offers both low on-resistance and high-speed switching capabilities.

Key Features

  • Low On-Resistance: The NP0900SBT3G boasts a very low on-resistance, which minimizes power loss and improves overall efficiency in circuits.
  • High-Speed Switching: With its ability to switch on and off rapidly, this MOSFET is suitable for high-speed applications, ensuring quick response times and reduced switching losses.
  • Surface Mount Package: Encased in a SOT-23 package, the NP0900SBT3G is designed for surface mounting, making it an excellent choice for space-constrained applications.
  • Low Threshold Voltage: The device features a low threshold voltage, enabling it to be driven by low-voltage control signals and making it compatible with a variety of logic levels.

Applications

The NP0900SBT3G is highly versatile and can be used in numerous applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Powered Devices
  • Motor Control Systems
  • Load/Power Switching
  • Signal Processing

Technical Specifications

The NP0900SBT3G operates with a continuous drain current of 200 mA and a power dissipation of 225 mW. Its low on-resistance of typically 5 Ohms ensures efficient operation. The device can handle a maximum drain-source voltage (Vds) of 60 V, making it suitable for a variety of high-voltage applications. Its gate threshold voltage is in the range of 1.0 V to 2.5 V, which allows for low-voltage drive capability.

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NP0900SBT3G is no exception. It is designed to meet the rigorous standards of the electronics industry, ensuring reliability and performance in even the most demanding conditions. Whether for commercial, industrial, or consumer applications, the NP0900SBT3G from ON Semiconductor is a solid choice for designers seeking a robust and efficient MOSFET solution.

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