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NSBC113EPDXV6T1G

Part No NSBC113EPDXV6T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT563 / Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel package
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 1k
DC Current Gain (hFE) (Minimum) @ Ic, Vce 3 @ 5mA, 10V
Vce Saturation (Maximum) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector Cutoff (Maximum) 500nA
Power - Max 500mW
Mounting SMD
Package SOT-563, SOT-666
Manufacturer Package SOT-563
Win Source Part Number 790825-NSBC113EPDXV6T1G
Popularity Medium
Supply and Demand Status Limited
Family Name NSBC113EPDXV6
Introduction Date November 01, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian NSBC113EPDXV6T1G CAD Model

Description

ON Semiconductor NSBC113EPDXV6T1G Overview

The ON Semiconductor NSBC113EPDXV6T1G is a cutting-edge electronic component designed for high-efficiency and low-power applications. This product is a testament to ON Semiconductor's commitment to providing innovative solutions that cater to the evolving needs of the electronics industry. The NSBC113EPDXV6T1G is a versatile and reliable component, ideal for a wide range of applications, including portable devices, power management systems, and signal processing circuits.

Key Features

  • Low V<sub>CE(sat): The NSBC113EPDXV6T1G boasts a low collector-emitter saturation voltage, which enhances its efficiency by minimizing power loss during operation.
  • High Current Gain Bandwidth Product: It offers an excellent frequency response, making it suitable for applications that require fast switching and signal amplification.
  • Complementary NPN-PNP Transistors: This product includes a pair of complementary NPN-PNP transistors, allowing for flexible circuit design and simplifying the construction of push-pull configurations.
  • ESD Protection: Built-in Electrostatic Discharge (ESD) protection shields the device from unexpected voltage spikes, ensuring long-term reliability and stability.
  • Small Package Footprint: The NSBC113EPDXV6T1G comes in a compact SOT-563 package, making it an excellent choice for space-constrained applications.

Applications

The versatility of the NSBC113EPDXV6T1G makes it suitable for a diverse array of applications. It is commonly used in:

  • Power Management Circuits
  • DC-DC Converters
  • Signal Processing
  • Motor Control Systems
  • Audio Amplifiers
  • Battery-Powered Devices

Environmental and Quality Certifications

ON Semiconductor ensures that the NSBC113EPDXV6T1G meets rigorous environmental and quality standards. The device is compliant with RoHS directives, and the manufacturing process adheres to industry-standard quality management systems, guaranteeing both performance and eco-friendliness.

In summary, the NSBC113EPDXV6T1G from ON Semiconductor is a highly efficient, robust, and versatile component that offers designers the flexibility and reliability needed for today's electronic circuits. Its low power consumption, high-speed operation, and compact form factor make it an excellent choice for a multitude of electronic applications.

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