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Same model may have multiple batches, images only for reference.
SIJ128LDP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIJ128LDP-T1-GE3

Part No SIJ128LDP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIJ128LDP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 10.2A (Ta), 25.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 15.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 40 V
Power Dissipation (Max) 3.6W (Ta), 22.3W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIJ128
Other Names 742-SIJ128LDP-T1-GE3TR,742-SIJ128LDP-T1-GE3CT,742-SIJ128LDP-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277594-SIJ128LDP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIJ128LDP-T1-GE3 CAD Model

Description

The SIJ128LDP-T1-GE3 from Vishay Siliconix is an N-channel MOSFET transistor with a drain to source voltage of 80V.

  • Current: 10.2A (Ta) or 25.5A (Tc) @ 25°C
  • Maximum Rds On: 15.6mOhm @ 10A, 10V
  • Maximum Gate Charge: 30 nC @ 10 V
  • Input Capacitance: 1250 pF @ 40 V
  • Vgs(th): 2.5V @ 250µA
  • Power Dissipation: 3.6W (Ta) or 22.3W (Tc)
  • Gate-Source Voltage: ±20V
  • Package/Case: PowerPAK® SO-8
  • Mounting Technology: SMD (SMT)
  • Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99 compliant

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