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NSBC124EPDXV6T5

Part No NSBC124EPDXV6T5
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 60 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 500mW
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 060562-NSBC124EPDXV6T5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NSBC124EPDXV6T5 CAD Model

Description

ON Semiconductor NSBC124EPDXV6T5 Bipolar Transistor

The ON Semiconductor NSBC124EPDXV6T5 is a high-performance NPN bipolar transistor designed for use in a variety of electronic applications. This device is part of ON Semiconductor's extensive range of transistors, known for their reliability and efficiency. The NSBC124EPDXV6T5 is engineered to deliver excellent current gain and low saturation voltage, making it suitable for high-speed switching operations.

This bipolar transistor features a double-diffused planar construction, which enhances its electrical characteristics and ensures stable performance under varying conditions. It is housed in a compact SOT-563 package, which is ideal for space-constrained applications. The small footprint of the package allows for high-density mounting on printed circuit boards, making it a perfect choice for portable and miniaturized electronic devices.

Key Specifications:

  • Configuration: Single NPN transistor
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector Current (IC): 100mA
  • DC Current Gain (hFE): 220 at 10mA VCE
  • Transition Frequency (fT): 250MHz
  • Power Dissipation (Pd): 150mW
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-563

The NSBC124EPDXV6T5 is optimized for low noise operation, which is crucial for applications in audio amplifiers, signal processing, and other sensitive electronic circuits. Its high transition frequency also makes it suitable for RF (radio frequency) applications where high-speed signal amplification is required.

Additionally, the device offers excellent device-to-device consistency, which is a significant advantage for manufacturers requiring uniform performance across their products. With its robust construction, the NSBC124EPDXV6T5 is also characterized by its high tolerance to thermal and electrical stress, contributing to a longer service life and reduced maintenance costs.

Whether you're designing power management systems, consumer electronics, or industrial control units, the ON Semiconductor NSBC124EPDXV6T5 bipolar transistor is a reliable component that provides a blend of performance, efficiency, and compactness to meet the demands of modern electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
515+ $0.0979 $50.4185
1,245+ $0.0804 $100.0980
1,930+ $0.0779 $150.3470
2,655+ $0.0754 $200.1870
3,435+ $0.0728 $250.0680
4,595+ $0.0653 $300.0535
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,000 pieces
MOQ: 515 pcs
Order Increment : 1 pcs
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