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NSS12200LT1G

Part No NSS12200LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 12V 2A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Max Vce (sat) 180mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 250 @ 500mA, 2V
Maximum Power Dissipation 460mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 025717-NSS12200LT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NSS12200LT1G CAD Model

Description

ON Semiconductor NSS12200LT1G – High-Performance PNP Bipolar Transistor

The ON Semiconductor NSS12200LT1G is a PNP bipolar transistor designed for high-performance applications requiring low voltage operation. This device is part of ON Semiconductor's extensive portfolio of transistors, known for their reliability and efficiency. The NSS12200LT1G offers a combination of features that make it suitable for a wide range of applications, including signal processing, power management, and amplification tasks.

Key Features

  • Low V<sub>CE(sat): The NSS12200LT1G boasts a low collector-emitter saturation voltage, which enhances overall energy efficiency by reducing power dissipation during operation.
  • High Current Gain Bandwidth Product: With a high current gain bandwidth product (f<sub>T), this transistor is ideal for amplification of high-frequency signals, ensuring minimal signal distortion and high linearity.
  • High Collector Current: It supports a continuous collector current (I<sub>C) of up to 2 A, making it capable of driving moderate loads with ease.
  • Complementary NPN Type Available: For design flexibility, ON Semiconductor offers a complementary NPN type transistor, enabling the creation of push-pull configurations for balanced drive circuits.
  • Small Package Footprint: The NSS12200LT1G comes in a small SOT-23 package, which is ideal for space-constrained applications without compromising performance.

Applications

This transistor is suitable for a variety of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Audio Amplifiers
  • Signal Amplification
  • Switching Circuits

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly solutions. The NSS12200LT1G is manufactured with a “green” molding compound and is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring minimal environmental impact.

In summary, the NSS12200LT1G from ON Semiconductor is a versatile PNP transistor that offers excellent performance for a broad range of electronic applications. Its high current gain, low saturation voltage, and small package size make it an ideal choice for designers looking for a reliable and efficient component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2302 $50.6440
530+ $0.1889 $100.1170
820+ $0.1830 $150.0600
1,130+ $0.1771 $200.1230
1,465+ $0.1712 $250.8080
1,955+ $0.1535 $300.0925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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