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NSVMUN5331DW1T1G

Part No NSVMUN5331DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP 50V BIPO SC88
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 2.2k
Typical Gain (hFE) (Min) 8 @ 5mA, 10V
Max Vce (sat) 250mV @ 5mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 125548-NSVMUN5331DW1T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NSVMUN5331DW1T1G CAD Model

Description

ON Semiconductor NSVMUN5331DW1T1G: A Versatile PNP Bipolar Transistor

The NSVMUN5331DW1T1G from ON Semiconductor stands out as a high-performance PNP bipolar transistor designed for use in a wide range of electronic applications. This device is renowned for its robustness and versatility, making it an ideal choice for designers looking to achieve efficient switching and amplification in their circuits.

Encased in a compact SOT-363 package, the NSVMUN5331DW1T1G offers a smart solution for space-constrained applications without compromising on power. It features a collector-emitter voltage (VCEO) of -50V and collector current (IC) capabilities of up to -100mA, making it suitable for moderate power handling requirements.

The device boasts a high current gain bandwidth product (fT) of 100MHz, which ensures high-frequency performance suitable for amplification in audio applications, signal processing, and other high-speed switching environments. Its low collector-emitter saturation voltage (VCE(sat)) ensures lower power dissipation, which is critical for energy-sensitive designs.

One of the key advantages of the NSVMUN5331DW1T1G is its integrated dual PNP transistors, which provide matched pair configurations that are beneficial for differential amplification stages, thereby simplifying design and reducing component count. This feature is particularly useful in applications requiring closely matched transistor characteristics, such as current mirrors and push-pull amplifiers.

ON Semiconductor has also taken steps to ensure that the NSVMUN5331DW1T1G meets stringent reliability standards. It is designed to tolerate harsh operating conditions, making it suitable for industrial and automotive applications that require high reliability and performance consistency over time.

Overall, the NSVMUN5331DW1T1G is a testament to ON Semiconductor's commitment to providing high-quality, reliable components. Whether it's for consumer electronics, industrial automation, or automotive systems, this PNP bipolar transistor is engineered to deliver exceptional performance and efficiency, making it a go-to component for electronic designers and engineers.

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