Product Overview: NTB23N03RT4G from ON Semiconductor

The NTB23N03RT4G is a cutting-edge power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This N-channel enhancement-mode field-effect transistor is designed for high-speed switching applications and is a testament to ON Semiconductor's commitment to providing advanced solutions for power management challenges.

Key Features

• High Performance: With a drain-to-source voltage (V<sub>DS) of 30V, the NTB23N03RT4G is capable of handling significant power levels, making it suitable for a wide range of applications.
• Low R<sub>DS(on): This MOSFET boasts a low on-state resistance, which translates to reduced power loss and improved efficiency in your electronic circuits.
• High Current Capability: The device is rated for a continuous drain current (I<sub>D) of 175A, ensuring it can support applications requiring high current.
• Logic Level Gate Drive: Its logic level gate drive allows for direct operation from logic-level voltages, simplifying the design of control circuits.

Applications

The NTB23N03RT4G is versatile and can be used in a variety of applications, including:

• Power supply converters
• Motor control circuits
• Automotive applications
• Switching regulators
• DC-DC converters

Quality and Reliability

ON Semiconductor's NTB23N03RT4G is designed with a focus on quality and reliability. It features a robust package that ensures long-term performance even under demanding conditions. The MOSFET is also RoHS compliant, adhering to environmental standards and minimizing the use of hazardous substances.

Technical Specifications

Parameter Value V<sub>DS (Drain-to-Source Voltage) 30V I<sub>D (Continuous Drain Current) 175A R<sub>DS(on) (On-State Resistance) Very Low Package D2PAK (TO-263)

In summary, the NTB23N03RT4G from ON Semiconductor is an exceptional choice for designers looking for a high-performance, efficient, and reliable power MOSFET. Whether for power conversion, motor control, or any other high-speed switching application, this device is engineered to exceed expectations.