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NTB35N15T4G

Part No NTB35N15T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 37A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 37A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 3200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 178W (Tj)
Maximum Rds On at Id,Vgs 50 mOhm @ 18.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083695-NTB35N15T4G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTB35N15T4G CAD Model

Description

ON Semiconductor NTB35N15T4G MOSFET Overview

The NTB35N15T4G from ON Semiconductor is a high-performance Power MOSFET designed to deliver efficient power management and conversion in a wide array of applications. This N-channel enhancement mode field-effect transistor is a testament to ON Semiconductor's commitment to providing energy-efficient solutions and cutting-edge technology.

Key Features

  • High Current Capability: The NTB35N15T4G is capable of supporting a continuous drain current of 35A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical on-resistance of just 0.045 ohms, this MOSFET ensures minimal power loss and improved efficiency in electronic circuits.
  • High-Temperature Performance: It can operate effectively over a wide temperature range, with a maximum junction temperature of 175°C, ensuring reliability under thermal stress.
  • Robust Voltage Rating: The device is rated for a drain-to-source voltage of 150V, providing a good margin for voltage spikes and surges often encountered in industrial environments.
  • Fast Switching Speed: The NTB35N15T4G boasts a fast switching speed, which is crucial for reducing switching losses and improving performance in high-frequency applications.
  • TO-220 Package: Encased in a TO-220 package, it offers a compact form factor while ensuring adequate heat dissipation for sustained performance.

Applications

The versatility of the NTB35N15T4G MOSFET makes it ideal for a range of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor control circuits
  • Automotive applications
  • Switching regulators
  • Synchronous rectification

Quality and Reliability

ON Semiconductor ensures that the NTB35N15T4G meets stringent quality and reliability standards. The device is RoHS compliant, reflecting the company's commitment to environmental sustainability. Customers can expect consistent performance and durability, backed by ON Semiconductor's reputation for excellence in power semiconductor solutions.

Conclusion

With its robust feature set, the NTB35N15T4G from ON Semiconductor stands out as a superior choice for designers seeking a reliable and efficient N-channel MOSFET. Whether it's for power management, conversion, or control, this component is engineered to enhance the performance and efficiency of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1744 $52.8480
105+ $0.9637 $101.1885
165+ $0.9335 $154.0275
225+ $0.9034 $203.2650
290+ $0.8733 $253.2570
385+ $0.7830 $301.4550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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