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PSMN013-100PS,127

Part No PSMN013-100PS,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 68A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 3195pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 13.9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 062142-PSMN013-100PS,127
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN013-100PS,127 CAD Model

Description

Introducing the PSMN013-100PS,127 MOSFET by NXP Semiconductors

The PSMN013-100PS,127 is a cutting-edge power MOSFET brought to you by NXP Semiconductors, a leader in the semiconductor industry. This high-performance component is designed to cater to a wide range of applications, including switch-mode power supplies, DC-DC converters, motor drives, and other power management tasks where efficiency and reliability are paramount.

Key Features

  • Low On-Resistance: With an exceptionally low on-resistance (R<sub>DS(on)), this MOSFET ensures minimal power loss and superior conductivity, making it an energy-efficient choice for your circuits.
  • High Current Capability: The device is capable of handling high currents, making it suitable for applications that demand robust power handling capabilities.
  • Fast Switching Performance: The PSMN013-100PS,127 offers fast switching speeds, which is crucial for reducing switching losses and improving overall performance in high-frequency applications.
  • Enhanced Thermal Performance: Thanks to its optimized design, the MOSFET exhibits excellent thermal characteristics, ensuring stable operation even under high temperature conditions.
  • Robust Package: Encased in a TO-220 package, it provides a durable and reliable solution that can withstand challenging environmental conditions.

Applications

The versatility of the PSMN013-100PS,127 makes it suitable for a variety of applications across different industries. Some of the common applications include:

  • Power supply units
  • Automotive systems
  • Telecommunication equipment
  • Industrial automation
  • Consumer electronics

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 100 V Continuous Drain Current (I<sub>D) 100 A Power Dissipation (P<sub>D) 170 W R<sub>DS(on) 13 mΩ Package TO-220

With its robust design and superior electrical characteristics, the PSMN013-100PS,127 from NXP Semiconductors is an excellent choice for designers looking for a high-quality MOSFET that delivers both performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8519 $55.5570
70+ $1.5196 $106.3720
105+ $1.4721 $154.5705
145+ $1.4246 $206.5670
185+ $1.3771 $254.7635
245+ $1.2346 $302.4770
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Availability: 4,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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