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NTB6412ANT4G

Part No NTB6412ANT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 58A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 3500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 18.2 mOhm @ 58A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 140416-NTB6412ANT4G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTB6412ANT4G CAD Model

Description

The NTB6412ANT4G is a cutting-edge power MOSFET developed by ON Semiconductor, designed to cater to a wide array of applications that demand high efficiency, reliability, and performance. This component is a testament to ON Semiconductor's commitment to providing innovative solutions in power management and conversion.

Key Features

  • Low On-Resistance: The NTB6412ANT4G boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capability: With its ability to handle high currents, this MOSFET is ideal for applications requiring high power density and robust current handling.
  • Fast Switching Speed: The device's fast switching speed is crucial for applications that require quick transitions, such as switching power supplies and DC-DC converters.
  • Enhanced Thermal Performance: The NTB6412ANT4G is designed with an advanced package that ensures superior thermal performance, making it suitable for high-temperature operations.
  • Gate Charge Optimization: This MOSFET features an optimized gate charge, which reduces switching losses and enhances the performance of the device in high-frequency applications.

Applications

The NTB6412ANT4G is versatile and can be used in a variety of applications, including:

  • Power Supply Units (PSUs)
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Automotive Electronics
  • Renewable Energy Systems

Quality and Reliability

ON Semiconductor ensures that the NTB6412ANT4G meets the highest standards of quality and reliability. Rigorous testing and quality control measures are implemented to guarantee performance even under the most demanding conditions. This makes the NTB6412ANT4G a reliable choice for designers and engineers looking for a MOSFET that will deliver consistent performance over its lifespan.

Conclusion

In conclusion, the NTB6412ANT4G from ON Semiconductor is a premier choice for those in need of a high-performance power MOSFET. Its low on-resistance, high current capability, fast switching speeds, and superior thermal performance make it a go-to component for a wide range of power management and conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9369 $58.1070
75+ $1.5893 $119.1975
115+ $1.5396 $177.0540
160+ $1.4900 $238.4000
205+ $1.4403 $295.2615
270+ $1.2913 $348.6510
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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