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NTB65N02RG

Part No NTB65N02RG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 25V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 9.5nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 1330pF @ 20V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.04W (Ta), 62.5W (Tc)
Rds On (Maximum) @ Id, Vgs 8.2 mOhm @ 30A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1232340-NTB65N02RG
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name NTB65N02R
Introduction Date March 12, 2003
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian NTB65N02RG CAD Model

Description

The NTB65N02RG is a high-performance Power MOSFET brought to you by ON Semiconductor, a leading supplier in the semiconductor industry. This device is designed to meet a wide variety of requirements in power management applications. Its robust and energy-efficient design makes it ideal for automotive, industrial, and commercial systems that require reliable power switching capabilities.

Key Features:

  • Low RDS(on): The NTB65N02RG boasts a low on-resistance, which translates to reduced conduction losses and improved efficiency in power conversion applications.
  • High Current Capability: With the ability to handle high currents, this MOSFET is suitable for demanding applications that require a robust current flow.
  • Enhanced Durability: The device is built with a ruggedized design that ensures it can withstand harsh operating conditions and provide a long operational lifespan.
  • Thermal Management: Good thermal characteristics ensure that the device operates reliably over a wide temperature range, which is critical for maintaining performance in thermally challenging environments.

Electrical Characteristics:

  • Voltage Rating (V<sub>DS): 24V
  • Continuous Drain Current (I<sub>D): 98A
  • Power Dissipation (P<sub>D): 3.8W
  • Gate Charge (Q<sub>G): 30nC

The NTB65N02RG is housed in a TO-263 package, which is known for its efficient heat dissipation and surface mount capability. This packaging allows for easier integration into various circuit designs and simplifies the assembly process. ON Semiconductor's commitment to quality ensures that each NTB65N02RG MOSFET meets stringent performance criteria and reliability standards.

Whether you're designing power supplies, motor controllers, or any system that demands efficient power regulation, the NTB65N02RG Power MOSFET from ON Semiconductor is an excellent choice that combines performance, efficiency, and reliability.

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