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Same model may have multiple batches, images only for reference.
SI7446DP-T1-E3
Same model may have multiple batches, images only for reference.

SI7446DP-T1-E3

Part No SI7446DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFETs 30V 19A 5.2W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 12 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 7.5 mΩ
Drain to Source Voltage (Vdss) 30 V
Element Configuration Single
Fall Time 16 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.04 mm
Length 4.9 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 1.9 W
Min Operating Temperature -55 °C
Number of Channels 1
Number of Pins 8
Power Dissipation 1.9 W
Rise Time 16 ns
RoHS Compliant
Turn-Off Delay Time 120 ns
Turn-On Delay Time 20 ns
Weight 506.605978 mg
Width 5.89 mm
Win Source Part Number 1023848-SI7446DP-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI7446DP-T1-E3 CAD Model

Description

The Vishay SI7446DP-T1-E3 is a single channel FET that is used in various RF applications.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 12A
  • Turn-On Delay Time: 20ns
  • Turn-Off Delay Time: 120ns
  • Pins: 8
  • Dimension: 4.9mm x 5.89mm x 1.04mm
  • Operating Temperature: -55°C to 150°C
  • RoHS Compliant: Yes
  • Popularity: Low
  • Supply and Demand: Shortage

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