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NTB75N03-6T4G

Part No NTB75N03-6T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 75nC @ 5V
Max Input Capacitance 5635pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 125W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 37.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083720-NTB75N03-6T4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTB75N03-6T4G CAD Model

Description

ON Semiconductor NTB75N03-6T4G: Power MOSFET

The ON Semiconductor NTB75N03-6T4G is a high-performance Power MOSFET designed to meet the demanding requirements of high-power switching applications. This device is well-suited for a range of industrial, automotive, and consumer applications where efficiency and reliability are of paramount importance. With its robust design and advanced manufacturing techniques, the NTB75N03-6T4G offers exceptional performance characteristics that make it a preferred choice for engineers and designers.

Key Features:

  • Low On-Resistance: The NTB75N03-6T4G boasts an extremely low on-resistance (R<sub>DS(on)) of just 7.5 mOhms at V<sub>GS = 10V, which significantly reduces conduction losses and improves overall efficiency.
  • High Current Capability: This device is capable of handling continuous drain currents up to 75A, making it suitable for high-current applications.
  • Logic Level Gate Drive: It can be driven by logic-level voltages, which simplifies the gate drive circuitry and is compatible with a wide range of controllers and drivers.
  • Low Gate Charge: With a low total gate charge (Q<sub>G), it ensures fast switching performance, which is critical in reducing switching losses.
  • Temperature Performance: The NTB75N03-6T4G is designed to operate over a broad temperature range, ensuring reliability even under extreme conditions.

Applications:

  • DC/DC Converters
  • Motor Drives
  • Power Management Systems
  • Automotive Applications
  • Switch Mode Power Supplies (SMPS)

The NTB75N03-6T4G is housed in a TO-220 package, providing excellent thermal performance and making it easy to mount onto a heatsink for even better heat dissipation. This package also allows for straightforward integration into existing designs.

ON Semiconductor's commitment to quality ensures that the NTB75N03-6T4G meets the stringent standards required for power MOSFETs. It includes built-in protection features such as Avalanche Energy Specified and Robust Gate Oxide, which contribute to the device's longevity and dependability. When it comes to high-power switching solutions, the NTB75N03-6T4G from ON Semiconductor is a solid choice that combines performance, efficiency, and reliability.

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