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NTD30N02T4G

Part No NTD30N02T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 24 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 20 V
Power Dissipation (Max) 75W (Tj)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 887752-NTD30N02T4G
Ultra Librarian 3D Model Ultra Librarian NTD30N02T4G CAD Model

Description

ON Semiconductor NTD30N02T4G Overview

The ON Semiconductor NTD30N02T4G is a robust and efficient N-channel Power MOSFET designed for high-performance power switching applications. This component is part of ON Semiconductor's extensive portfolio of power management solutions, engineered to provide reliable and energy-efficient power conversion in a compact form factor.

Key Features

  • High Drain-Source Voltage: With a V<sub>DS of 24V, the NTD30N02T4G is capable of handling significant voltage levels, making it suitable for a variety of demanding applications.
  • High Continuous Drain Current: This MOSFET can support a continuous drain current (I<sub>D) of 30A, ensuring it can manage high current loads with ease.
  • Low On-Resistance: The low R<sub>DS(on) of the device minimizes conduction losses and improves overall efficiency, which is critical for power-sensitive designs.
  • Fast Switching Speed: The fast switching capability of the NTD30N02T4G enhances performance in circuits where rapid switching is required.
  • Power Dissipation: With a power dissipation of 48W, this MOSFET can handle considerable amounts of power without overheating, ensuring stable performance under various conditions.

Applications

The NTD30N02T4G is ideal for a wide range of applications, including:

  • DC/DC Converters
  • Power Management in Portable Devices
  • Motor Drives
  • Switching Regulators
  • Load Switches
  • Automotive Applications

Package and Reliability

The NTD30N02T4G comes in a surface-mount DPAK package, which is known for its small footprint and excellent thermal performance. The package is designed for automated assembly processes, ensuring ease of integration into various circuit designs. ON Semiconductor's commitment to quality means this MOSFET is manufactured to meet high reliability standards, providing confidence in its performance and longevity in the field.

Environmental Compliance

Adhering to environmental standards, the NTD30N02T4G is compliant with RoHS (Restriction of Hazardous Substances) regulations, ensuring it does not contain harmful substances. This commitment to environmental responsibility makes it a suitable choice for eco-conscious applications and companies looking to minimize their ecological footprint.

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