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NTD32N06-1G

Part No NTD32N06-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 32A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1725pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta), 93.75W (Tj)
Maximum Rds On at Id,Vgs 26 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083781-NTD32N06-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD32N06-1G CAD Model

Description

ON Semiconductor NTD32N06-1G Power MOSFET

The NTD32N06-1G is a high-performance Power MOSFET from ON Semiconductor, designed to cater to a wide range of power switching and amplification needs. This device is part of ON Semiconductor's renowned N-channel MOSFET series, which is known for its reliability and efficiency in handling high-power applications.

The NTD32N06-1G boasts a robust and durable construction, with a maximum continuous drain current of 32A, allowing it to handle significant power without compromising performance. With a drain-to-source voltage (Vds) of 60V, it is well-suited for automotive and industrial applications where voltage fluctuations are common.

This MOSFET features ON Semiconductor's proprietary trench technology, which enhances its performance by reducing on-resistance and minimizing gate charge. This results in a device that not only switches more efficiently but also conserves energy, making it an excellent choice for power-sensitive designs.

Furthermore, the NTD32N06-1G has a low threshold voltage, which makes it easier to drive and control, even at lower gate voltages. This is particularly beneficial in battery-operated devices where power availability is limited. Its fast switching speed is another notable characteristic, enabling quicker response times in circuits that require rapid power modulation.

Thermal management is a critical aspect of any power device, and the NTD32N06-1G addresses this with its excellent thermal characteristics. The device comes in a TO-252 (DPAK) package, which is not only compact but also offers superior heat dissipation. This ensures that the MOSFET operates within safe temperature ranges, even under high current loads, thereby prolonging its lifespan and reliability.

ON Semiconductor's NTD32N06-1G is RoHS compliant, adhering to environmental standards and reducing the use of hazardous substances in electronics. It is a testament to the company's commitment to environmentally responsible manufacturing.

In conclusion, the NTD32N06-1G from ON Semiconductor is a versatile and efficient solution for designers looking to improve their power management systems. Its robust performance, combined with energy-saving features and reliable packaging, make it an ideal choice for a broad spectrum of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.4602 $59.8260
310+ $0.3776 $117.0560
475+ $0.3658 $173.7550
655+ $0.3540 $231.8700
845+ $0.3423 $289.2435
1,130+ $0.3068 $346.6840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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