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NTD32N06T4G

Part No NTD32N06T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 32A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1725pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta), 93.75W (Tj)
Maximum Rds On at Id,Vgs 26 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083785-NTD32N06T4G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTD32N06T4G CAD Model

Description

Overview of ON Semiconductor NTD32N06T4G

The ON Semiconductor NTD32N06T4G is a robust and efficient N-channel Power MOSFET designed to deliver high-performance switching characteristics for a wide range of applications. This power MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that meet the rigorous demands of modern electronic devices.

Key Features

  • High Current Capability: The NTD32N06T4G is capable of handling continuous drain currents up to 32A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical on-resistance of just 0.042 Ohms, this MOSFET ensures minimal power loss and improved efficiency in electronic circuits.
  • High-Temperature Performance: It can operate at junction temperatures ranging from -55°C to 175°C, offering reliable performance even under extreme conditions.
  • Fast Switching: Designed for fast switching, this MOSFET minimizes transition losses and enhances overall performance in high-frequency applications.
  • Logic Level Gate Drive: The device can be driven by a 5V logic level signal, simplifying the interface with microcontrollers and other logic devices.

Applications

The versatility of the NTD32N06T4G makes it an excellent choice for a variety of applications, including:

  • Power management systems
  • DC/DC converters
  • Motor control circuits
  • Automotive applications
  • Switching regulators
  • Synchronous rectification

Package and Quality Assurance

The NTD32N06T4G comes in a durable and compact DPAK (TO-252) package, which ensures efficient thermal management and saves valuable space on printed circuit boards. ON Semiconductor's commitment to quality is reflected in this product's compliance with RoHS and Halogen-Free standards, ensuring not only high performance but also environmental responsibility.

In conclusion, the ON Semiconductor NTD32N06T4G Power MOSFET is an excellent choice for designers looking for a high-performance, energy-efficient, and reliable component for their power switching applications. Its robustness, coupled with ON Semiconductor's reputation for quality, makes it a valuable addition to any electronic system.

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