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NTD4806N-1G

Part No NTD4806N-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 23nC @ 4.5V
Max Input Capacitance 2142pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 004161-NTD4806N-1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTD4806N-1G CAD Model

Description

ON Semiconductor NTD4806N-1G Power MOSFET

The NTD4806N-1G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in power and signal management. This particular MOSFET is designed to meet a wide range of applications, offering efficient power management and reliability in a compact package.

Key Features

  • Low R<sub>DS(on): The NTD4806N-1G boasts an exceptionally low on-resistance, which translates into superior efficiency and reduced heat generation during operation.
  • High Current Capacity: With the ability to handle a continuous drain current of up to 30A, this MOSFET is suitable for high-power applications.
  • High Performance: Engineered for fast switching performance, it ensures minimal power losses and is ideal for switching applications that demand high speed.
  • Voltage Rating: It is designed to work with a drain-to-source voltage (V<sub>DSS) of 30V, which is suitable for a variety of low to medium voltage applications.
  • Power Dissipation: Capable of dissipating up to 48W, the NTD4806N-1G can handle significant amounts of power, making it robust for challenging environments.

Applications

The NTD4806N-1G is versatile in its applications, suitable for:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive applications
  • Switching regulators

Package and Reliability

Encased in a TO-252 (DPAK) package, the NTD4806N-1G is not only compact but also provides excellent thermal performance and durability. ON Semiconductor's commitment to quality ensures that this MOSFET meets the high reliability standards required for industrial and automotive applications.

Environmental Compliance

The NTD4806N-1G is RoHS compliant, adhering to environmental regulations that limit the use of hazardous substances. This commitment to environmental sustainability makes it a responsible choice for eco-conscious businesses and consumers.

In conclusion, the NTD4806N-1G from ON Semiconductor is an exemplary choice for designers looking to optimize their power management solutions with a MOSFET that offers efficiency, high performance, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6952 $59.0920
205+ $0.5705 $116.9525
315+ $0.5527 $174.1005
435+ $0.5348 $232.6380
560+ $0.5170 $289.5200
750+ $0.4635 $347.6250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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