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NTD4810N-1G

Part No NTD4810N-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.6A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 1350pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 060608-NTD4810N-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4810N-1G CAD Model

Description

The NTD4810N-1G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leading force in energy-efficient innovations. This device is designed to address the needs of a broad range of applications, offering a perfect balance between efficiency and robustness.

Key Features

  • Low R<sub>DS(on): This MOSFET features a low on-resistance, which translates to reduced conduction losses and improved power efficiency in your applications.
  • High Current Capability: With the ability to handle high currents, the NTD4810N-1G is ideal for demanding power applications, ensuring reliable performance under heavy loads.
  • Logic Level Gate Drive: The device can be driven by logic-level voltages, making it compatible with modern microcontrollers and simplifying the design of driving circuits.
  • Surface Mount Package: Packaged in a compact surface-mount form factor, it is suitable for space-constrained applications and allows for efficient assembly processes.

Applications

The versatility of the NTD4810N-1G makes it an excellent choice for a wide array of applications, including:

  • Power Management Systems
  • DC/DC Converters
  • Motor Drives
  • Switching Regulators
  • Automotive Applications

Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30 V Continuous Drain Current (I<sub>D) 32 A Power Dissipation (P<sub>D) 48 W R<sub>DS(on) Max @ V<sub>GS = 10 V 8.6 mΩ

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability. The NTD4810N-1G MOSFET is no exception, with rigorous testing and quality control processes in place to ensure that each component meets the stringent requirements for performance and durability.

With its robust design and superior electrical characteristics, the NTD4810N-1G from ON Semiconductor stands out as a top choice for designers looking to enhance the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3837 $51.7995
320+ $0.3148 $100.7360
495+ $0.3050 $150.9750
680+ $0.2952 $200.7360
880+ $0.2853 $251.0640
1,175+ $0.2558 $300.5650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,575 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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