The NTD4857N-1G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted name in the field of power management and discrete semiconductors. This MOSFET is designed to meet the rigorous standards of today's electronic industry, providing efficient power control and management for a wide range of applications.

Key Features

• Low On-Resistance: The NTD4857N-1G boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in your circuits.
• High Current Capability: This device is capable of handling high levels of current, making it suitable for demanding applications that require robust current management.
• Low Gate Charge: The low gate charge characteristic of this MOSFET ensures faster switching speeds, which is crucial for high-frequency operations.
• High Performance in a Compact Package: Encased in a small footprint surface-mount package, the NTD4857N-1G delivers its impressive performance without taking up excessive space on your PCB.
• RoHS Compliant: In line with modern environmental standards, this product is RoHS compliant, minimizing the environmental impact by avoiding the use of hazardous substances.

Applications

The versatility of the NTD4857N-1G makes it an ideal choice for various applications, including:

• Power supply regulation modules
• DC to DC converters
• Motor control circuits
• Automotive applications
• Switching applications where efficiency is paramount

Technical Specifications

The NTD4857N-1G MOSFET operates with the following specifications:

• V<sub>DS (Drain-Source Voltage): 30V
• I<sub>D (Continuous Drain Current): 11A
• R<sub>DS(on) (Drain-Source On-Resistance): 20 mΩ
• Package: Pb-free, Halogen-free/BFR-free and are RoHS compliant

With its combination of efficiency, reliability, and environmental consciousness, the NTD4857N-1G from ON Semiconductor stands out as a superior choice for designers looking to enhance their power management systems.