The NTD4965N-35G is a high-performance, N-channel Power MOSFET brought to you by ON Semiconductor, a trusted name in the field of power management and discrete semiconductors. This MOSFET is designed to meet a wide range of applications, offering a balance of efficient power handling, low on-resistance, and high thermal performance.

Key Features

• Drain-to-Source Voltage (V<sub>DS): 30V, providing a high threshold for voltage, making it suitable for a variety of applications.
• Continuous Drain Current (I<sub>D): 41A at 25°C, ensuring that the device can handle significant current without overheating or failing.
• Low On-Resistance (R<sub>DS(on)): 8.8 mΩ at V<sub>GS = 10V, minimizing power loss and improving efficiency.
• Gate Charge (Q<sub>g): Low, which translates to faster switching and reduced switching losses.
• Power Dissipation (P<sub>D): 48W, indicating the amount of power it can dissipate without exceeding its maximum junction temperature.
• Operating Temperature: Ranges from -55°C to 175°C, providing reliable performance under extreme conditions.

Applications

The NTD4965N-35G is versatile and can be used in a variety of circuits and end-products. Some of the typical applications include:

• Power Supply Converters
• DC-DC Converters
• Motor Drives
• Automotive Applications
• Switching Regulators
• Power Management Functions

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The NTD4965N-35G is no exception, and it is manufactured in state-of-the-art facilities, ensuring that it meets the stringent requirements of the electronics industry. With its robust design and proven performance, the NTD4965N-35G is an ideal choice for designers looking for a reliable power MOSFET solution.