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NTD4979N-35G

Part No NTD4979N-35G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9.4A IPAK TRIMME / Trans MOSFET N-CH 30V 12.7A 3-Pin(3+Tab) IPAK Rail
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 16.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 837pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.38W (Ta), 26.3W (Tc)
Rds On (Maximum) @ Id, Vgs 9 mOhm @ 30A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package I-Pak
Package TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 790845-NTD4979N-35G
Popularity Medium
Supply and Demand Status Limited
Family Name NTD4979N
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian NTD4979N-35G CAD Model

Description

ON Semiconductor NTD4979N-35G Power MOSFET

The NTD4979N-35G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leading name in power management and semiconductor solutions. This advanced MOSFET is designed to meet the rigorous demands of modern electronic circuits, providing efficient power management with a focus on energy savings and reliability.

With its low on-resistance and high current handling capability, the NTD4979N-35G is an ideal choice for a wide range of applications, including power supplies, motor controls, and high-efficiency DC-DC converters. The device is housed in a robust and compact TO-252 (DPAK) package, which is not only space-saving but also ensures enhanced thermal performance and durability.

Key Features:

  • Low R<sub>DS(on): This MOSFET offers a low drain-to-source on-resistance, which translates to reduced power losses and improved overall efficiency in your application.
  • High Continuous Drain Current (I<sub>D): The NTD4979N-35G supports a high continuous drain current, making it suitable for handling high-power applications without compromising performance.
  • Fast Switching: The device is designed for fast switching applications, enabling high-speed operation while minimizing switching losses.
  • High Temperature Performance: With an ability to operate effectively at higher temperatures, this MOSFET is reliable in various environmental conditions.
  • RoHS Compliant: The NTD4979N-35G is compliant with RoHS standards, ensuring that it meets the latest environmental regulations and is free from hazardous substances.

The NTD4979N-35G is not only characterized by its impressive electrical performance but also by its ease of integration into existing designs, thanks to ON Semiconductor's commitment to industry-standard packaging and pin configurations. Whether you're designing power management systems for consumer electronics, industrial automation, or automotive applications, the NTD4979N-35G offers a reliable and efficient solution.

For engineers and designers looking for a power MOSFET that delivers both performance and reliability, the NTD4979N-35G from ON Semiconductor is an excellent choice. Its combination of low on-resistance, high current capacity, and fast switching makes it a versatile component in any power management design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3494 $59.3980
405+ $0.2868 $116.1540
625+ $0.2778 $173.6250
860+ $0.2688 $231.1680
1,115+ $0.2599 $289.7885
1,490+ $0.2330 $347.1700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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