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NTD60N02RG

Part No NTD60N02RG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 8.5A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 8.5A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 14nC @ 4.5V
Max Input Capacitance 1330pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta), 58W (Tc)
Maximum Rds On at Id,Vgs 10.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083847-NTD60N02RG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD60N02RG CAD Model

Description

Overview of the NTD60N02RG Power MOSFET

The NTD60N02RG is a high-performance Power MOSFET designed and manufactured by ON Semiconductor, a trusted name in the semiconductor industry. This product is crafted to meet the rigorous demands of a wide range of applications, including automotive systems, power management, and other high-efficiency power conversion and switching applications.

Key Features

  • Low On-Resistance: The NTD60N02RG boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced power loss and improved efficiency when conducting electricity.
  • High Current Capacity: Engineered to handle high currents, this MOSFET can support applications that require robust current flow without compromising performance.
  • Logic Level Gate Drive: Its logic level gate drive allows for compatibility with modern microcontrollers and logic circuits, simplifying design and integration processes.
  • Robust Thermal Performance: With an optimal thermal design, the NTD60N02RG can operate effectively under high-temperature conditions, ensuring reliability and longevity.

Electrical Characteristics

The NTD60N02RG operates with a drain-to-source voltage (V<sub>DSS) of 24V, which is suitable for a variety of low to medium voltage applications. The continuous drain current (I<sub>D) is rated at a substantial 60A, ensuring that the MOSFET can handle significant power levels. The device's power dissipation is also noteworthy, allowing it to manage the heat generated during operation effectively.

Package and Durability

Encased in a robust and compact DPAK package, the NTD60N02RG is designed for space-efficient PCB layouts. This packaging not only provides a small footprint but also offers excellent mechanical durability. Additionally, the MOSFET is RoHS compliant, adhering to environmental standards that restrict the use of hazardous substances in electronic components.

Applications

With its high-efficiency and power-handling capabilities, the NTD60N02RG is an ideal choice for a variety of applications, including:

  • DC to DC Converters
  • Motor Drives
  • Power Supply Systems
  • Automotive Electronics
  • Switching Regulators

In conclusion, the NTD60N02RG Power MOSFET from ON Semiconductor is a versatile and reliable component that meets the needs of modern electronic systems requiring high performance, efficiency, and durability.

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