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NTD6416ANT4G

Part No NTD6416ANT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 17A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 620pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 81 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 004181-NTD6416ANT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD6416ANT4G CAD Model

Description

ON Semiconductor NTD6416ANT4G - N-Channel Power MOSFET

The NTD6416ANT4G is a high-performance N-Channel Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient power and signal management solutions. This state-of-the-art MOSFET is designed to meet a wide range of power management requirements, particularly suited for power switching applications that demand high efficiency and reliability.

With its robust and durable design, the NTD6416ANT4G boasts an impressive continuous drain current (ID) of 33 A, making it capable of handling high current loads with ease. The device operates at a standard threshold voltage, ensuring compatibility with existing circuit designs and power management systems. Its low on-state resistance (RDS(on)) of just 8.4 mΩ at 10 V minimizes power losses and improves overall system efficiency, which is critical for energy-sensitive applications.

The NTD6416ANT4G is built using ON Semiconductor's advanced trench technology, which provides superior performance in terms of switching speed and thermal characteristics. This technology allows the MOSFET to switch faster and operate at higher temperatures without compromising its lifespan or reliability. With a maximum operating temperature of 175°C, it is well-suited for demanding environments and applications where other components might fail.

The device comes in a compact, surface-mountable DPAK (TO-252) package, which is ideal for space-constrained applications. It also features a low gate charge (Qg) that enhances its fast switching capabilities, further contributing to the reduction of switching losses in high-frequency operations. This makes the NTD6416ANT4G an excellent choice for switch mode power supplies, DC-DC converters, motor drives, and other power-intensive applications.

In summary, the NTD6416ANT4G from ON Semiconductor represents a blend of efficiency, power, and reliability. Its advanced features and robust design make it a versatile component for a wide array of power management tasks, ensuring optimal performance in both industrial and consumer electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3082 $50.8530
400+ $0.2529 $101.1600
615+ $0.2450 $150.6750
845+ $0.2371 $200.3495
1,095+ $0.2292 $250.9740
1,460+ $0.2055 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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