The NTD65N03R-1G from ON Semiconductor is a robust and efficient MOSFET designed to meet the needs of a wide range of applications. This power MOSFET is part of ON Semiconductor's high-performance NTD series, renowned for their quality and reliability.
Key Features
- High Current Capacity: The NTD65N03R-1G is capable of handling continuous drain currents up to 65A, making it suitable for high-power applications.
- Low On-Resistance: With an R<sub>DS(on) of just 8.4 mΩ at V<sub>GS = 10 V, this MOSFET ensures minimal power loss and improved efficiency.
- High-Speed Switching: The device features fast switching speeds, which is crucial for applications requiring high-frequency operation.
- Robust Thermal Performance: The NTD65N03R-1G comes in a TO-252 (DPAK) package, which offers excellent thermal performance and a compact footprint.
Applications
The versatility of the NTD65N03R-1G makes it ideal for a variety of applications, including:
- Power supply units
- DC-DC converters
- Motor drives
- Automotive systems
- Switching applications
Quality and Reliability
ON Semiconductor is a trusted name in the semiconductor industry, and the NTD65N03R-1G is built to the highest standards. It features a robust design that ensures long-term reliability even in demanding conditions. The device is also RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability.
Technical Specifications
Parameter
Value
Drain-to-Source Voltage (V<sub>DSS)
30V
Continuous Drain Current (I<sub>D)
65A
Power Dissipation (P<sub>D)
83.3W
Operating Temperature Range
-55°C to +175°C
With its combination of high performance, efficiency, and reliability, the NTD65N03R-1G is an excellent choice for designers looking for a power MOSFET that can handle demanding applications.