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NTD65N03R-1G

Part No NTD65N03R-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 9.5A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 9.5A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 16nC @ 5V
Max Input Capacitance 1400pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083851-NTD65N03R-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD65N03R-1G CAD Model

Description

The NTD65N03R-1G from ON Semiconductor is a robust and efficient MOSFET designed to meet the needs of a wide range of applications. This power MOSFET is part of ON Semiconductor's high-performance NTD series, renowned for their quality and reliability.

Key Features

  • High Current Capacity: The NTD65N03R-1G is capable of handling continuous drain currents up to 65A, making it suitable for high-power applications.
  • Low On-Resistance: With an R<sub>DS(on) of just 8.4 mΩ at V<sub>GS = 10 V, this MOSFET ensures minimal power loss and improved efficiency.
  • High-Speed Switching: The device features fast switching speeds, which is crucial for applications requiring high-frequency operation.
  • Robust Thermal Performance: The NTD65N03R-1G comes in a TO-252 (DPAK) package, which offers excellent thermal performance and a compact footprint.

Applications

The versatility of the NTD65N03R-1G makes it ideal for a variety of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive systems
  • Switching applications

Quality and Reliability

ON Semiconductor is a trusted name in the semiconductor industry, and the NTD65N03R-1G is built to the highest standards. It features a robust design that ensures long-term reliability even in demanding conditions. The device is also RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability.

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30V Continuous Drain Current (I<sub>D) 65A Power Dissipation (P<sub>D) 83.3W Operating Temperature Range -55°C to +175°C

With its combination of high performance, efficiency, and reliability, the NTD65N03R-1G is an excellent choice for designers looking for a power MOSFET that can handle demanding applications.

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