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NTGS4111PT2G

Part No NTGS4111PT2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.6A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 750pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 630mW (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6
Win Source Part Number 1083885-NTGS4111PT2G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTGS4111PT2G CAD Model

Description

Product Overview: NTGS4111PT2G - ON Semiconductor

The NTGS4111PT2G is a high-performance, small-signal N-Channel MOSFET produced by ON Semiconductor, one of the leaders in energy-efficient innovations. This MOSFET is designed to deliver efficient power control and switching with low on-resistance and high-speed performance. It is a suitable choice for a wide range of applications, including load switch, power management, and conversion systems.

Key Features

  • Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)) which enhances its efficiency by minimizing power losses during operation.
  • High-Speed Switching: With its fast switching capabilities, the NTGS4111PT2G is ideal for high-frequency applications, ensuring minimal delay and high performance in power conversion and management.
  • Low Threshold Voltage: The low gate threshold voltage allows for the MOSFET to be driven at lower voltages, making it compatible with logic-level circuits and easier to interface with microcontrollers and other digital circuits.
  • ESD Protection: The device includes built-in ESD protection, safeguarding it against electrostatic discharge events and enhancing its reliability and longevity in sensitive applications.
  • Compact Footprint: Housed in a small SOT-23 package, the NTGS4111PT2G is optimized for space-constrained applications without compromising on power and performance.

Applications

The versatility of the NTGS4111PT2G allows it to be used in various applications, including:

  • Power management for portable devices
  • Battery-powered systems
  • DC/DC converters
  • Load switch circuits
  • Motor control modules

Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30V Gate-to-Source Voltage (V<sub>GS) ±20V Continuous Drain Current (I<sub>D) 3.5A Power Dissipation (P<sub>D) 1.25W Operating Temperature Range -55°C to 150°C

The NTGS4111PT2G by ON Semiconductor is a testament to the company's commitment to delivering high-quality, reliable components that meet the demands of modern electronic systems. Its balance of efficiency, size, and robustness makes it an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5329 $58.2567
56+ $2.0790 $116.4240
87+ $2.0132 $175.1484
119+ $1.9485 $231.8715
154+ $1.8838 $290.1052
206+ $1.6886 $347.8516
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,200 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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