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Same model may have multiple batches, images only for reference.
SI4890BDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4890BDY-T1-E3

Part No SI4890BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 8-SOIC
Datasheet
SI4890BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.6V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1535pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta), 5.7W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1096026-SI4890BDY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4890BDY-T1-E3 CAD Model

Description

The Vishay 1096026-SI4890BDY-T1-E3 is an N-channel MOSFET designed for surface mounting.

  • Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
  • Drive Voltage: 4.5V, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 16A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.6V @ 250μA
  • Max Gate Charge: 33nC @ 10V
  • Max Input Capacitance: 1535pF @ 15V
  • Maximum Gate-Source Voltage: ±25V
  • Maximum Rds On: 12 mOhm @ 10A, 10V
  • Supply and Demand: Limited

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28+ $4.1384 $115.8752
44+ $4.0090 $176.3960
60+ $3.8796 $232.7760
77+ $3.7503 $288.7731
104+ $3.3622 $349.6688
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