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NTHL040N120SC1

Part No NTHL040N120SC1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 60A TO247-3 / N-Channel 1200 V 60A (Tc) 348W (Tc) Through Hole TO-247-3
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 20 V
Vgs (Max) +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1781 pF @ 800 V
FET Feature -
Power Dissipation (Max) 348W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number NTHL040
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1357006-NTHL040N120SC1
Ultra Librarian 3D Model Ultra Librarian NTHL040N120SC1 CAD Model

Description

ON Semiconductor NTHL040N120SC1: A High-Performance SiC Power MOSFET

The NTHL040N120SC1 is a state-of-the-art Silicon Carbide (SiC) Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This robust power MOSFET is engineered to meet the high-efficiency and high-power density requirements of modern power applications. It is an ideal choice for a wide range of applications, including electric vehicles (EVs), solar inverters, uninterruptible power supplies (UPS), and high-performance power conversion systems.

With a drain-to-source voltage (V<sub>DS) of 1200V and a continuous drain current (I<sub>D) of 40A at 25°C, the NTHL040N120SC1 is capable of handling high-power applications with ease. The device boasts an extremely low on-resistance (R<sub>DS(on)) of only 40mΩ, which significantly reduces conduction losses and improves overall system efficiency.

The SiC MOSFET technology employed in the NTHL040N120SC1 offers superior switching performance compared to traditional silicon devices. It features fast switching speeds and a rugged body diode, which allows for efficient operation even under hard-switching conditions. This results in reduced switching losses and better thermal performance, leading to a more reliable and longer-lasting device.

ON Semiconductor has designed the NTHL040N120SC1 with a focus on reliability and durability. The device is characterized by its high threshold voltage (V<sub>TH), which provides excellent immunity to false turn-on events in noisy environments. Additionally, it is capable of withstanding high surge currents, making it a robust choice for demanding applications.

The package of the NTHL040N120SC1 is designed to optimize the thermal performance and to simplify the assembly process. Its compact footprint allows for a high power density, enabling designers to create smaller and more efficient power systems. With its exceptional performance and reliability, the NTHL040N120SC1 from ON Semiconductor is a superior choice for designers looking to leverage the advantages of SiC technology in their power conversion and management applications.

For further information and complete specifications, customers are encouraged to visit the ON Semiconductor website or contact their local sales representative.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $39.0000 $78.0000
4+ $32.0000 $128.0000
5+ $31.0000 $155.0000
7+ $30.0000 $210.0000
9+ $29.0000 $261.0000
12+ $26.0000 $312.0000
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Availability: 165 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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