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Same model may have multiple batches, images only for reference.
SI1315DL-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1315DL-T1-GE3

Part No SI1315DL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 0.9A SC70-3 / Trans MOSFET P-CH 8V 0.9A 3-Pin SC-70 T/R
Datasheet
SI1315DL-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 3.4nC @ 4.5V
Max Input Capacitance 112pF @ 4V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 300mW (Ta), 400mW (Tc)
Maximum Rds On at Id,Vgs 336 mOhm @ 800mA, 4.5V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Dimension SC-70, SOT-323
Win Source Part Number 104769-SI1315DL-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si1315DL
Introduction Date November 30, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI1315DL-T1-GE3 CAD Model

Description

This electronic component is a MOSFET product of Vishay Manufacturer.

  • Polarity: P-Channel
  • Power Dissipation: 300mW (Ta), 400mW (Tc)
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 1.8V, 4.5V
  • Status: Active
  • Operating Temperature: -50°C to 150°C (TJ)
  • Package: SOT-323
  • Dimension: SC-70, SOT-323
  • Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current @ 25°C: 900mA (Tc)
  • Gate-Source Threshold Voltage: 800mV @ 250μA
  • Max Gate Charge: 3.4nC @ 4.5V
  • Maximum Rds On @ Id, Vgs: 336 mOhm @ 800mA, 4.5V
  • Alternative Part: Si1317DL-T1-GE3
  • Supply and Demand: Balanced

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