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NTHS4501NT1G

Part No NTHS4501NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4.9A CHIPFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 9.1nC @ 10V
Max Input Capacitance 462pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 38 mOhm @ 4.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 103646-NTHS4501NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTHS4501NT1G CAD Model

Description

The ON Semiconductor NTHS4501NT1G is a state-of-the-art, high-performance, N-Channel Power MOSFET designed for a wide range of applications. This compact and efficient semiconductor device is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

Key Features

  • Low On-Resistance: The NTHS4501NT1G boasts an exceptionally low on-resistance, which translates to reduced power losses and improved efficiency in switching applications.
  • High-Speed Switching: Engineered for high-speed switching, this MOSFET is ideal for power management tasks in modern electronic circuits, ensuring swift and responsive operation.
  • Advanced Trench Technology: Utilizing advanced trench technology, the device offers superior performance and reliability, making it suitable for demanding environments.
  • Low Threshold Voltage: With a low threshold voltage, the NTHS4501NT1G ensures low-voltage operation, enabling its use in low-power devices and applications.
  • Compact Footprint: The small form factor of the MOSFET allows for high-density board designs, saving valuable space in compact electronic assemblies.

Applications

The versatility of the NTHS4501NT1G MOSFET makes it suitable for a variety of applications, including:

  • Power supply circuits
  • DC/DC converters
  • Motor control systems
  • Computing and server systems
  • Battery management
  • Load switches
  • Portable electronic devices

Product Specifications

The NTHS4501NT1G operates with a continuous drain current of 6.9 A and a power dissipation of 2.5 W. Its maximum operating temperature is specified at 150°C, ensuring stable performance under thermal stress. The device comes in a compact SOT-23 package, providing a space-saving solution for PCB layouts.

In summary, the NTHS4501NT1G from ON Semiconductor is an excellent choice for designers looking for a robust, high-efficiency N-Channel MOSFET. Its low on-resistance, high-speed switching capabilities, and advanced trench technology make it a reliable and energy-efficient component for a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4692 $58.6500
305+ $0.3850 $117.4250
465+ $0.3730 $173.4450
640+ $0.3610 $231.0400
830+ $0.3490 $289.6700
1,110+ $0.3128 $347.2080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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