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NTJS3151PT1G

Part No NTJS3151PT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 12V 2.7A 6-Pin SC-88 T/R / MOSFET P-CH 12V 2.7A SOT-363
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 100μA
Max Gate Charge 8.6nC @ 4.5V
Max Input Capacitance 850pF @ 12V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 3.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 025780-NTJS3151PT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name NTJS3151P
Introduction Date March 31, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NTJS3151PT1G CAD Model

Description

ON Semiconductor NTJS3151PT1G - N-Channel Power MOSFET

The ON Semiconductor NTJS3151PT1G is a high-performance, N-Channel Power MOSFET designed to meet a broad range of applications requiring efficient power management and reliability. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to the electronics industry.

Key Features:

  • Low On-Resistance: The NTJS3151PT1G features an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High-Speed Switching: Engineered for fast switching performance, this MOSFET is ideal for high-frequency applications, ensuring minimal switching losses and better performance in power conversion systems.
  • Low Threshold Voltage: Its low threshold voltage allows for operation at lower gate drive voltages, making it suitable for low-voltage applications and reducing power consumption.
  • ESD Protection: The device comes with built-in Electrostatic Discharge (ESD) protection, safeguarding it against the damaging effects of sudden voltage spikes during handling and operation.
  • Compact SOT-323 Package: The NTJS3151PT1G is housed in a small SOT-323 package, making it an excellent choice for space-constrained applications without compromising on power handling capabilities.

Applications:

The versatility of the NTJS3151PT1G allows it to be used in a wide array of applications, including but not limited to:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Powered Devices
  • Motor Control Systems
  • Load/Power Switching
  • Computing and Telecommunications

Technical Specifications:

With a continuous drain current (I<sub>D) of 2.1 A and a drain-source voltage (V<sub>DSS) of 20 V, the NTJS3151PT1G is capable of handling moderate power levels in electronic circuits. The device operates within a junction temperature range of -55°C to 150°C, ensuring stability and reliability across various environmental conditions.

In summary, ON Semiconductor's NTJS3151PT1G N-Channel Power MOSFET is an efficient and reliable component suitable for a diverse range of electronic applications. Its low on-resistance, high-speed switching capabilities, and compact form factor make it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
310+ $0.1883 $58.3730
750+ $0.1545 $115.8750
1,160+ $0.1497 $173.6520
1,595+ $0.1448 $230.9560
2,065+ $0.1401 $289.3065
2,760+ $0.1256 $346.6560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 310 pcs
Order Increment : 1 pcs
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