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NTLJS3113PT1G

Part No NTLJS3113PT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.5A 6-WFDN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 15.7nC @ 4.5V
Max Input Capacitance 1329pF @ 16V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-WDFN (2x2)
Dimension 6-WDFN Exposed Pad
Win Source Part Number 025789-NTLJS3113PT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTLJS3113PT1G CAD Model

Description

Overview of NTLJS3113PT1G by ON Semiconductor

The NTLJS3113PT1G is a high-performance Power MOSFET developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This product is designed to meet the rigorous demands of modern electronic circuits, offering exceptional power efficiency, reliability, and thermal performance. It is a preferred choice for designers who are looking for a MOSFET that can handle significant power in a compact footprint.

Key Features

  • Low On-Resistance: The NTLJS3113PT1G features very low on-resistance (R<sub>DS(on)), which translates to reduced power losses and improved overall efficiency in applications.
  • High Current Capacity: This MOSFET is capable of supporting high continuous drain currents, making it suitable for high-power applications.
  • Power Saving: With its low threshold voltage, the NTLJS3113PT1G is ideal for battery-operated devices, as it helps in conserving power and extending battery life.
  • Thermal Management: The device is encapsulated in a small, thermally efficient package that aids in heat dissipation, ensuring stable performance even under high load conditions.
  • Robustness: The MOSFET is designed to withstand harsh operating conditions, providing reliable performance with built-in ESD protection.

Applications

The versatility of the NTLJS3113PT1G allows it to be used in a wide array of applications, including:

  • Power management circuits
  • DC/DC converters
  • Motor control systems
  • Computing and server power supplies
  • Portable and wireless devices
  • LED lighting solutions

Package and Quality Assurance

The NTLJS3113PT1G is provided in a compact Pb-free, Halogen-free and RoHS compliant package, ensuring environmental friendliness and compliance with global regulations. ON Semiconductor is committed to the highest standards of quality, and this product is rigorously tested to ensure its performance and reliability in a wide range of operating conditions.

In summary, the NTLJS3113PT1G from ON Semiconductor represents a state-of-the-art solution for power management in modern electronics, combining efficiency, robustness, and compact design to meet the needs of today's high-performance circuitry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2208 $58.5120
640+ $0.1811 $115.9040
990+ $0.1755 $173.7450
1,365+ $0.1698 $231.7770
1,760+ $0.1642 $288.9920
2,355+ $0.1471 $346.4205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 194,000 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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