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NTMD5836NLR2G

Part No NTMD5836NLR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET 40 V, Dual N−Channel, SOIC−8 Optimized Gate Charge
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 9A, 5.7A
Rds On (Maximum) @ Id, Vgs 12 mOhm @ 10A, 10V
Vgs(th) (Maximum) @ Id 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 50nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2120pF @ 20V
Power - Max 1.5W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SOIC
Win Source Part Number 1232535-NTMD5836NLR2G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name NTMD5836NL
Introduction Date December 15, 2010
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian NTMD5836NLR2G CAD Model

Description

Introducing the NTMD5836NLR2G Power MOSFET by ON Semiconductor

The NTMD5836NLR2G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This device is designed to meet the rigorous demands of power regulation and switching applications, providing a robust and efficient solution for engineers and designers alike.

Key Features

  • Advanced Technology: Built with ON Semiconductor's cutting-edge Trench technology, the NTMD5836NLR2G offers reduced on-resistance and lower gate charge, leading to improved performance and power efficiency.
  • High Current Capability: This MOSFET is capable of handling continuous drain currents up to 30 A, making it suitable for high-power applications.
  • Low R<sub>DS(on): With an ultra-low on-state resistance of just 8 mΩ at a 10 V gate drive, this device ensures minimal power loss and heat generation during operation.
  • Dual N-Channel Configuration: The NTMD5836NLR2G features a dual N-Channel setup, which allows for efficient use in half-bridge, full-bridge, and synchronous buck converter topologies.
  • Power-Saving: Its excellent thermal performance and high efficiency make it an ideal choice for power-saving applications.
  • Compact Package: Encased in a small, leadless, halogen-free, and RoHS-compliant DFN8 package, the NTMD5836NLR2G is perfect for space-constrained designs.

Applications

The NTMD5836NLR2G is versatile and can be employed in a wide array of applications, including:

  • DC/DC converters
  • Power management for computers and servers
  • Motor drives and controllers
  • Power tools and battery management systems
  • Automotive applications and more

With its exceptional performance and reliability, the NTMD5836NLR2G from ON Semiconductor is the go-to choice for professionals seeking a high-quality Power MOSFET. It ensures that your designs are not only powerful but also energy-efficient and compact.

Quality and Environmental Compliance

ON Semiconductor is committed to environmental stewardship. The NTMD5836NLR2G is produced with the highest standards of quality and environmental compliance, ensuring that your product remains sustainable and reliable for the long term.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.9815 $59.7780
29+ $4.0875 $118.5375
44+ $3.9593 $174.2092
61+ $3.8323 $233.7703
78+ $3.7041 $288.9198
105+ $3.3206 $348.6630
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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