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NTMS4706NR2G

Part No NTMS4706NR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.4A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 950pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 830mW (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 10.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 060680-NTMS4706NR2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMS4706NR2G CAD Model

Description

The ON Semiconductor NTMS4706NR2G is a high-performance, N-Channel Power MOSFET designed to deliver efficient power management and conversion in a compact package. This semiconductor device is a critical component for a wide range of applications, including switch-mode power supplies, motor controls, and high-speed switching circuits.

Key Features

  • Low On-Resistance: This MOSFET features a low on-resistance (RDS(on)), which enhances its efficiency by minimizing power loss during operation.
  • High Switching Speed: With its fast switching capabilities, the NTMS4706NR2G is suitable for applications requiring high-speed operation and reduced switching losses.
  • High Current Capacity: It can handle a continuous drain current (ID), making it ideal for high-power applications.
  • Enhanced Thermal Performance: The device's thermal management is optimized through its design, ensuring reliable operation even under high temperature conditions.
  • Gate Charge Optimization: The optimized gate charge (QG) allows for reduced power consumption during switching, contributing to the overall energy efficiency of the system.

Applications

The NTMS4706NR2G is versatile and can be used in various industrial, automotive, and consumer applications. Its robustness and reliability make it suitable for:

  • DC/DC converters
  • Power management systems
  • Brushless DC motor drives
  • Load switching
  • Power tools

Package and Quality

Packaged in a Pb-free, RoHS compliant, and Halogen-free SO-8 package, the NTMS4706NR2G is environmentally friendly and designed for sustainable applications. ON Semiconductor's commitment to quality ensures that this MOSFET meets the stringent industry standards for performance and reliability.

Conclusion

The ON Semiconductor NTMS4706NR2G N-Channel Power MOSFET is an excellent choice for designers looking for a device that offers low power loss, high efficiency, and the ability to handle significant power levels. Its advanced features and robust design make it a go-to component for a multitude of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $3.0099 $60.1980
47+ $2.4705 $116.1135
73+ $2.3932 $174.7036
100+ $2.3158 $231.5800
129+ $2.2384 $288.7536
173+ $2.0074 $347.2802
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,900 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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