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NTMS4937NR2G

Part No NTMS4937NR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.6A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 38.5nC @ 10V
Max Input Capacitance 2563pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 810mW (Ta)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1083944-NTMS4937NR2G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTMS4937NR2G CAD Model

Description

Introducing the NTMS4937NR2G Power MOSFET by ON Semiconductor

The NTMS4937NR2G is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a testament to ON Semiconductor's commitment to providing advanced power management solutions that meet the needs of modern electronic applications.

Key Features:

  • Low On-Resistance: The NTMS4937NR2G boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Current Capacity: Engineered to handle high currents, this MOSFET is capable of supporting the demanding requirements of power-intensive applications without compromising performance.
  • Robust Thermal Performance: With an excellent thermal performance profile, the NTMS4937NR2G ensures reliable operation even under high temperature conditions, making it suitable for a wide range of industrial and commercial applications.
  • Advanced Technology: Utilizing ON Semiconductor's latest technological advancements, this MOSFET provides superior switching performance, which is crucial for high-speed power switching applications.

Applications:

The NTMS4937NR2G is ideal for a variety of applications, including:

  • DC/DC Converters
  • Power Management Systems
  • Motor Drives
  • Battery Powered Devices
  • Computing and Server Power Supplies

Product Specifications:

The NTMS4937NR2G comes in a compact, surface-mountable package and features the following specifications:

  • Drain-to-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 30A
  • Power Dissipation (PD): 48W
  • RDS(on): Very low at 10V
  • Package: SO-8

ON Semiconductor's NTMS4937NR2G is a versatile and durable solution for designers looking to optimize their power management systems with a reliable and efficient MOSFET. Its combination of low on-resistance, high current capacity, and robust thermal management make it an excellent choice for your next project.

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