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NTMS5835NLR2G

Part No NTMS5835NLR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 9.2A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 2115pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 10 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 141866-NTMS5835NLR2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTMS5835NLR2G CAD Model

Description

ON Semiconductor NTMS5835NLR2G MOSFET

The NTMS5835NLR2G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient power and signal management. This particular MOSFET is designed to meet a wide range of applications, offering a blend of low on-resistance and cost-effectiveness, making it ideal for high-efficiency power management tasks.

Constructed with advanced PowerTrench® technology, the NTMS5835NLR2G ensures minimal conduction losses and offers excellent switching performance. This technology is instrumental in achieving the low on-resistance and low gate charge that contribute to its superior efficiency. The device is housed in a compact and robust package, which provides excellent thermal performance and is suitable for a variety of mounting techniques.

Key Features:

  • Low On-Resistance: The device features a very low R<sub>DS(on), which reduces power losses and improves overall efficiency, making it a preferred choice for power-intensive applications.
  • High Current Capability: With its ability to handle high currents, the NTMS5835NLR2G is well-suited for demanding applications that require robust power handling.
  • Low Gate Charge: The low gate charge (Qg) ensures that the MOSFET can switch on and off rapidly, which is crucial for high-frequency operations and helps to minimize switching losses.
  • High Performance in a Compact Package: The NTMS5835NLR2G comes in a small footprint, which is perfect for space-constrained applications without compromising on power and performance.
  • RoHS Compliant: This product is compliant with RoHS standards, ensuring that it meets environmental regulations and reduces the use of hazardous substances.

The NTMS5835NLR2G is versatile and can be used in a variety of applications, including DC/DC converters, power supply units, motor drives, and other power management solutions where efficiency and reliability are paramount. Its robust design and technical specifications make it an excellent choice for engineers and designers looking to optimize their power systems.

Overall, the NTMS5835NLR2G from ON Semiconductor exemplifies the company's commitment to delivering high-quality components that push the boundaries of power efficiency and innovation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2875 $57.9375
110+ $1.0565 $116.2150
170+ $1.0235 $173.9950
235+ $0.9905 $232.7675
305+ $0.9574 $292.0070
405+ $0.8584 $347.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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