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PSMN2R2-30YLC

Part No PSMN2R2-30YLC
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.95V @ 1mA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 3310pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 141W (Tc)
Maximum Rds On at Id,Vgs 2.15 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 091799-PSMN2R2-30YLC
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN2R2-30YLC CAD Model

Description

PSMN2R2-30YLC - NXP's High-Performance MOSFET

The PSMN2R2-30YLC from NXP Semiconductors is a state-of-the-art N-channel enhancement mode Field-Effect Transistor (FET) designed for high-efficiency power management tasks. This MOSFET is a part of NXP's NextPowerS3 portfolio, which emphasizes superior performance in power conversion applications.

Key Features

  • Low On-State Resistance: The PSMN2R2-30YLC boasts an ultra-low on-state resistance (R<sub>DS(on)) of just 2.2 mΩ at V<sub>GS = 10 V, which minimizes conduction losses and improves overall efficiency.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of up to 100 A, this MOSFET can handle high current loads, making it ideal for demanding applications.
  • 30 V Drain-to-Source Voltage: The device supports a maximum drain-to-source voltage (V<sub>DSS) of 30 V, providing a good balance between performance and voltage rating for a wide range of applications.
  • Reduced Q<sub>g and Q<sub>gd: Optimized gate charge (Q<sub>g) and gate-drain charge (Q<sub>gd) lead to faster switching performance and reduced switching losses.
  • Robust Package: Enclosed in an LFPAK33 (Power-SO8) package, the PSMN2R2-30YLC is designed for improved thermal performance and a compact footprint.

Applications

The PSMN2R2-30YLC is versatile and can be used in various applications such as:

  • DC/DC converters
  • Motor control systems
  • Power supplies for servers, telecom, and datacom
  • OR-ing and hot-swap operations
  • Power tool drives
  • Automotive applications and more

Advantages

The PSMN2R2-30YLC is designed to provide designers with a combination of high efficiency, reliability, and performance in their power management systems. Its low R<sub>DS(on) and high I<sub>D capabilities ensure minimal power loss while its optimized gate charge characteristics enable high-speed switching. Additionally, the robust LFPAK33 package ensures that the device can withstand harsh conditions while maintaining a small form factor.

With NXP's commitment to quality and performance, the PSMN2R2-30YLC MOSFET is an excellent choice for engineers looking to enhance the efficiency and reliability of their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9932 $59.5920
145+ $0.8150 $118.1750
220+ $0.7896 $173.7120
305+ $0.7641 $233.0505
395+ $0.7387 $291.7865
525+ $0.6622 $347.6550
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Availability: 39,100 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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