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NTP055N65S3H

Part No NTP055N65S3H
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 47A TO220-3 / N-Channel 650 V 47A (Tc) 305W (Tc) Through Hole TO-220-3
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series SuperFET® III
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id 4V @ 4.8mA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4305 pF @ 400 V
FET Feature -
Power Dissipation (Max) 305W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number NTP055
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1354481-NTP055N65S3H
Ultra Librarian 3D Model Ultra Librarian NTP055N65S3H CAD Model

Description

ON Semiconductor NTP055N65S3H Power MOSFET

The ON Semiconductor NTP055N65S3H is a high-performance, N-channel power MOSFET designed for a range of applications that demand high efficiency and power density. This device is part of ON Semiconductor's portfolio of power management solutions, crafted to meet the rigorous standards of modern electronic systems.

The NTP055N65S3H boasts an impressive 650V drain-to-source breakdown voltage (V<sub>DS), making it suitable for high-voltage applications. Its low on-resistance (R<sub>DS(on)) of 55 mΩ minimizes conduction losses, thus enhancing overall system efficiency. Additionally, the power MOSFET features a maximum continuous drain current (I<sub>D) of 80A at 25°C, allowing it to handle significant power without compromising performance.

With a low gate charge (Q<sub>g) and a fast-switching capability, the NTP055N65S3H is optimized for high-frequency circuits. This attribute is particularly beneficial in applications such as switch-mode power supplies (SMPS), Uninterruptible Power Supplies (UPS), and high-efficiency DC-DC converters, where switching losses can significantly impact overall system performance.

The device is housed in a TO-220 package, which is widely recognized for its robustness and excellent thermal characteristics. This package ensures that the MOSFET can operate reliably under a wide range of temperatures, making it a versatile choice for industrial, automotive, and consumer applications. The NTP055N65S3H is also RoHS compliant, adhering to the latest environmental standards and regulations.

ON Semiconductor's NTP055N65S3H is designed with a focus on reliability and performance. Its features such as Avalanche Energy Rated (EAR), and a maximum junction temperature of 175°C, ensure that it can withstand harsh operating conditions and provide a long service life. Whether you're designing a power supply for server farms, electric vehicles, or high-performance computing systems, the NTP055N65S3H provides the efficiency, reliability, and power density required for today's demanding electronic environments.

With its combination of high voltage capability, low on-resistance, and fast-switching speeds, the NTP055N65S3H from ON Semiconductor is an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.1130 $52.9210
35+ $2.9160 $102.0600
54+ $2.8174 $152.1396
77+ $2.6204 $201.7708
100+ $2.5219 $252.1900
124+ $2.4234 $300.5016
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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